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TM497MBK36H-70 PDF预览

TM497MBK36H-70

更新时间： 2024-02-17 02:09:25
品牌 Logo 应用领域
德州仪器 - TI 动态存储器内存集成电路
页数 文件大小 规格书
9页 125K
描述
4MX36 MULTI DEVICE DRAM MODULE, 70ns, SMA72, SIMM-72

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中文翻译

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TM497MBK36H-70 技术参数

生命周期：Obsolete零件包装代码：SIMM
包装说明：SIMM, SSIM72针数：72
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.32.00.24风险等级：5.84
访问模式：PAGE最长访问时间：70 ns
其他特性：RAS ONLY/CAS BEFORE RAS REFRESHI/O 类型：COMMON
JESD-30 代码：R-XSMA-N72内存密度：150994944 bit
内存集成电路类型：DRAM MODULE内存宽度：36
功能数量：1端口数量：1
端子数量：72字数：4194304 words
字数代码：4000000工作模式：ASYNCHRONOUS
最高工作温度：70 °C最低工作温度：
组织：4MX36输出特性：3-STATE
封装主体材料：UNSPECIFIED封装代码：SIMM
封装等效代码：SSIM72封装形状：RECTANGULAR
封装形式：MICROELECTRONIC ASSEMBLY电源：5 V
认证状态：Not Qualified刷新周期：2048
座面最大高度：25.527 mm自我刷新：NO
最大待机电流：0.012 A子类别：DRAMs
最大压摆率：1.16 mA最大供电电压 (Vsup)：5.5 V
最小供电电压 (Vsup)：4.5 V标称供电电压 (Vsup)：5 V
表面贴装：NO技术：CMOS
温度等级：COMMERCIAL端子形式：NO LEAD
端子节距：1.27 mm端子位置：SINGLE
Base Number Matches：1

TM497MBK36H-70 数据手册

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TM497MBK36H, TM497MBK36I  
4194304 BY 36-BIT  
DYNAMIC RAM MODULES  
SMMS676 – MARCH 1997  
Organization . . . 4 194 304 × 36  
3-State Output  
Performance Ranges:  
Single 5-V Power Supply (±10% Tolerance)  
ACCESS ACCESS ACCESS READ  
72-Pin Single-In-Line Memory Module  
(SIMM) for Use With Sockets  
TIME  
TIME  
TIME  
OR  
t
t
t
WRITE  
CYCLE  
(MIN)  
RAC  
CAC  
AA  
Uses Eight 16M-bit Dynamic RAMs  
(DRAMs) in Plastic Small-Outline J-Lead  
(SOJ) Packages and Four 4M-bit DRAMs in  
Plastic SOJ Packages  
(MAX)  
(MAX)  
(MAX)  
’497MBK36H/I-60 60 ns  
’497MBK36H/I-70 70 ns  
’497MBK36H/I-80 80 ns  
15 ns  
18 ns  
20 ns  
30 ns  
35 ns  
40 ns  
110 ns  
130 ns  
150 ns  
Low Power Dissipation  
Long Refresh Period . . . 32 ms  
(2 048 Cycles)  
†
Operating Free-Air Temperature  
Range . . . 0°C to 70°C  
All Inputs, Outputs, and Clocks are Fully  
TTL Compatible  
Presence Detect  
Common CAS Control for Nine Common  
Data-In and Data-Out Lines in Four Blocks  
Gold-Tabbed Version Available  
TM497MBK36H  
Separate RAS Control for Eighteen Data-In  
and Data-Out Lines in Two Blocks  
Tin-Lead (Solder) Tabbed Version  
Available: TM497MBK36I  
description  
The TM497MBK36H/I is a 144M-bit dynamic random-access memory (DRAM) device organized as four times  
4194304 × 9 (bit 9 generally is used for parity) in a 72-pin leadless single-in-line memory module (SIMM). The  
SIMM is composed of eight TMS417400ADJ, 4 194 304 × 4-bit DRAMs in 24/26-lead plastic SOJ packages,  
and four TMS44100DJ, 4 194 304 × 1-bit DRAMs in 20/26-lead plastic SOJ packages mounted on a substrate  
with decoupling capacitors. TMS417400ADJ and TMS44100DJ are described in the TMS417400A and  
TMS44100 data sheets (literature numbers SMKS889 and SMHS561, respectively).  
The TM497MBK36H/I is available in a double-sided, BK, leadless module for use with sockets. The  
TM497MBK36H/I features RAS access times of 60, 70, and 80 ns. This device is characterized for operation  
from 0°C to 70°C.  
operation  
The TM497MBK36H/I operates as eight TMS417400ADJs and four TMS44100DJs connected as shown in the  
functionalblockdiagramandTable1. SeetheTMS417400AandTMS44100datasheetsfordetailsofoperation.  
The common I/O feature dictates the use of early write cycles to prevent contention on D and Q.  
Table 1. Connection Table  
DATA BLOCK  
DQ0–DQ8  
RASx  
RAS0  
RAS0  
RAS2  
RAS2  
CASx  
CAS0  
CAS1  
CAS2  
CAS3  
DQ9–DQ17  
DQ18–DQ26  
DQ27–DQ35  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
†
A0–A9 address lines must be refreshed every 16 ms.  
Copyright 1997, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443  
1234567...9

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与TM497MBK36H-70相关器件

型号 品牌 获取价格 描述 数据表
TM497MBK36H-80 TI

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 		4MX36 MULTI DEVICE DRAM MODULE, 80ns, SMA72, SIMM-72
TM497MBK36I TI

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 		4194304 BY 36-BIT DYNAMIC RAM MODULES
TM497MBK36I-60 TI

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 		4MX36 MULTI DEVICE DRAM MODULE, 60ns, SMA72, SIMM-72
TM497MBK36I-70 TI

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 		4MX36 MULTI DEVICE DRAM MODULE, 70ns, SMA72, SIMM-72
TM497MBK36I-80 TI

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 		4MX36 MULTI DEVICE DRAM MODULE, 80ns, SMA72, SIMM-72
TM497MBK36Q TI

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 		4194304 BY 36-BIT DYNAMIC RAM MODULE
TM497MBK36Q-60 TI

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 		4MX36 FAST PAGE DRAM MODULE, 60ns, SMA72, SIMM-72
TM497MBM36A-60 TI

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 		4MX36 FAST PAGE DRAM MODULE, 60ns, SMA72, SIMM-72
TM497MBM36A-70 TI

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 		4MX36 FAST PAGE DRAM MODULE, 70ns, SMA72, SIMM-72
TM497MBM36A-80 TI

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 		4MX36 FAST PAGE DRAM MODULE, 80ns, SMA72, SIMM-72

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