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Datasheet > TM497BBK32I-60
TM497BBK32I-60 PDF预览

TM497BBK32I-60

更新时间： 2024-09-23 14:45:15
品牌 Logo 应用领域
德州仪器 - TI 动态存储器内存集成电路
页数 文件大小 规格书
12页 165K
描述
4MX32 FAST PAGE DRAM MODULE, 60ns, SMA72, SIMM-72

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中文翻译

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TM497BBK32I-60 技术参数

是否无铅： 含铅生命周期：Obsolete
零件包装代码：SIMM包装说明：SIMM, SSIM72
针数：72Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.32.00.02
风险等级：5.84访问模式：FAST PAGE
最长访问时间：60 ns其他特性：RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O 类型：COMMONJESD-30 代码：R-XSMA-N72
内存密度：134217728 bit内存集成电路类型：FAST PAGE DRAM MODULE
内存宽度：32功能数量：1
端口数量：1端子数量：72
字数：4194304 words字数代码：4000000
工作模式：ASYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：4MX32
输出特性：3-STATE封装主体材料：UNSPECIFIED
封装代码：SIMM封装等效代码：SSIM72
封装形状：RECTANGULAR封装形式：MICROELECTRONIC ASSEMBLY
电源：5 V认证状态：Not Qualified
刷新周期：2048座面最大高度：25.527 mm
自我刷新：NO最大待机电流：0.008 A
子类别：DRAMs最大压摆率：0.88 mA
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：4.5 V
标称供电电压 (Vsup)：5 V表面贴装：NO
技术：CMOS温度等级：COMMERCIAL
端子形式：NO LEAD端子节距：1.27 mm
端子位置：SINGLEBase Number Matches：1

TM497BBK32I-60 数据手册

 浏览型号TM497BBK32I-60的Datasheet PDF文件第2页浏览型号TM497BBK32I-60的Datasheet PDF文件第3页浏览型号TM497BBK32I-60的Datasheet PDF文件第4页浏览型号TM497BBK32I-60的Datasheet PDF文件第5页浏览型号TM497BBK32I-60的Datasheet PDF文件第6页浏览型号TM497BBK32I-60的Datasheet PDF文件第7页 
TM497BBK32H, TM497BBK32I 4194304 BY 32-BIT  
TM893CBK32H, TM893CBK32I 8388608 BY 32-BIT  
DYNAMIC RAM MODULES  
SMMS675A – MARCH 1997 – REVISED APRIL 1997  
Organization  
Presence Detect  
– TM497BBK32H/I: 4194304 x 32  
– TM893CBK32H/I: 8388608 x 32  
Performance Ranges:  
ACCESS ACCESS ACCESS  
READ  
Single 5-V Power Supply (±10% Tolerance)  
TIME TIME TIME  
OR  
WRITE  
t
t
t
CAC  
RAC  
AA  
72-Pin Single-In-Line Memory Module  
(SIMM) for Use With Sockets  
CYCLE  
(MIN)  
(MAX)  
’497BBK32H/I-50 50 ns  
’497BBK32H/I-60 60 ns  
’497BBK32H/I-70 70 ns  
(MAX)  
25 ns  
30 ns  
35 ns  
(MAX)  
13 ns  
TM497BBK32H/I – Uses Eight 16M-Bit  
Dynamic Random-Access Memory (DRAM)  
Devices in Plastic Small-Outline J-Lead  
(SOJ) Packages  
90 ns  
110 ns  
130 ns  
15 ns  
18 ns  
’893CBK32H/I-50 50 ns  
’893CBK32H/I-60 60 ns  
’893CBK32H/I-70 70 ns  
25 ns  
30 ns  
35 ns  
13 ns  
15 ns  
18 ns  
90 ns  
110 ns  
130 ns  
TM893CBK32H/I – Uses Sixteen 16M-Bit  
DRAMs in Plastic SOJ Packages  
Long Refresh Period  
32 ms (2 048 Cycles)  
Low Power Dissipation  
Operating Free-Air Temperature Range  
All Inputs, Outputs, Clocks Fully  
TTL-Compatible  
0°C to 70°C  
†
Gold-Tabbed Version Available:  
3-State Output  
TM497BBK32H, TM893CBK32H  
Common CAS Control for Eight Common  
Data-In and Data-Out Lines in Four Blocks  
Tin-Lead (Solder-) Tabbed Version  
Available: TM497BBK32I, TM893CBK32I  
Enhanced Page Mode Operation With  
CAS-Before-RAS (CBR), RAS-Only, and  
Hidden Refresh  
description  
The TM497BBK32H/I is a 16M-byte dynamic random-access memory (DRAM) device organized as 4 ×  
4194304 × 8 bits in a 72-pin leadless single-in-line memory module (SIMM). The SIMM is composed of eight  
TMS417400ADJ, 4194304 × 4-bit DRAMs, each in 24/26-lead plastic small-outline J-lead (SOJ) packages  
mounted on a substratewithdecouplingcapacitors. TheTMS417400ADJisdescribedintheTMS417400Adata  
sheet (literature number SMKS889).  
The TM497BBK32H/I SIMM is available in the single-sided BK leadless module for use with sockets. The  
TM497BBK32H/I features RAS access times of 50, 60, and 70 ns. This device is characterized for operation  
from 0°C to 70°C.  
The TM893CBK32H/I is a 32M-byte DRAM organized as 4 8388608 × 8 bits in a 72-pin leadless SIMM. The  
SIMM is composed of sixteen TMS417400ADJ, 4194304 × 4-bit DRAMs.  
The TM893CBK32H/I SIMM is available in the double-sided BK leadless module for use with sockets. The  
TM893CBK32H/I features RAS access times of 50, 60, and 70 ns. This device is characterized for operation  
from 0°C to 70°C.  
operation  
The TM497BBK32H/I operates as eight TMS417400ADJs connected as shown in the functional block diagram  
and in Table 1. The common I/O feature dictates the use of early write cycles to prevent contention on D and  
Q.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
†
Part numbers in this data sheet are for the gold-tabbed version; the information applies to both gold-tabbed and solder-tabbed versions.  
Copyright 1997, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443  
1234567...12

中文翻译

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 		4194304-WORD BY 9-BIT DYNAMIC RAM MODULE
TM497EU9-70 TI

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