Datasheet > TLP590B

TLP590B

更新时间： 2024-01-26 08:35:00

品牌	Logo	应用领域
东芝 - TOSHIBA		光电二极管光电二极管
页数	文件大小	规格书
5页	155K
描述
GaAS As Ired & Photo−Diode Array

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中文翻译

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技术参数
数据手册

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TLP590B 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.75
最大正向电流：	0.05 A	最大正向电压：	1.7 V
最大绝缘电压：	2500 V	安装特点：	THROUGH HOLE MOUNT
元件数量：	1	最高工作温度：	85 °C
最低工作温度：	-40 °C	子类别：	Optocoupler - Transistor Outputs
表面贴装：	NO	Base Number Matches：	1

TLP590B 数据手册

TLP590B

TOSHIBA Photocoupler GaAℓAs Ired & Photo−Diode Array

TLP590B

Telecommunication

Programmable Controllers

Mos Gate Driver

Unit in mm

MOS FET Gate Driver

The TOSHIBA TLP590B consists of an aluminum galium arsenide

infrared emitting diode optically coupled to a series connected photo−

diode array in a six lead plastic DIP package.

TLP590B is suitable for MOS FET gate driver.

UL recognized: UL1577, file No. E67349

Short Current

Type

Name

Marking Of

Classification

(min.)

C20

20µA

12µA

TLP590B

10mA

TOSHIBA

11−7A9

Standard

20, blank

Weight: 0.39g

(Note) Application type name for certification test, please

use standard product type name, i.e.

TLP590B(C20): TLP590B

Maximum Ratings (Ta = 25°C)

Pin Configuration(top view)

Characteristics

Forward current

Symbol

Rating

Unit

Forward current derating

∆I / °C

-0.5

mA / °C

(Ta ≥ 25°C)

Pulse forward current

(100µs pulse, 100 pps)

1. : Anode

2. : Cathode

3. : NC

Reverse voltage

Junction temperature

Foward current

125

°C

µA

4. : Cathode

6. : Anode

Reverse voltage

Junction temperature

Storage temperature range

Operating temperature range

125

°C

stg

opr

-55~125

-40~85

Lead soldering temperature

(10sec.)

260

°C

sol

Isolation voltage

2500

Vrms

(AC, 1 min., R.H. ≤ 60%) (Note 1)

(Note 1) Device considered a two terminal device: Pins 1, 2 and 3

shorted together, and pins 4 and 6 shorted together.

2002-09-25

12 3 4 5

中文翻译

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