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TLP591B PDF预览

TLP591B

更新时间: 2024-11-04 22:42:07
品牌 Logo 应用领域
东芝 - TOSHIBA 光电光电器件二极管光电二极管
页数 文件大小 规格书
4页 147K
描述
TOSHIBA Photocoupler GaALAs Ired & Photo−Diode Array

TLP591B 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active包装说明:PLASTIC, DIP-6/5
Reach Compliance Code:unknownHTS代码:8541.40.80.00
风险等级:5Is Samacsys:N
配置:SINGLE WITH BUILT-IN RESISTOR功能数量:1
最高工作温度:85 °C最低工作温度:-25 °C
光电设备类型:OPTOELECTRONIC DEVICEBase Number Matches:1

TLP591B 数据手册

 浏览型号TLP591B的Datasheet PDF文件第2页浏览型号TLP591B的Datasheet PDF文件第3页浏览型号TLP591B的Datasheet PDF文件第4页 
TLP591B  
TOSHIBA Photocoupler GaAAs Ired & PhotoDiode Array  
TLP591B  
Unit in mm  
Telecommunication  
Programmable Controllers  
MOS Gate Driver  
MOS FET Gate Driver  
The TOSHIBA TLP591B consists of an aluminum galium arsenide  
infrared emitting diode optically coupled to a series connected  
photodiode array in a six lead plastic DIP package.  
TLP591B is suitable for MOS FET gate driver.  
TLP591B has an internal shunt resistor to optimize switching speed.  
·
UL recognized: UL1577, file no. E67349  
TOSHIBA  
117A9  
Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
50  
Unit  
mA  
Forward current  
I
F
Forward current derating  
I /°C  
F
-0.5  
mA /°C  
(Ta 25°C)  
Pulse forward current  
(100µs pulse, 100pps)  
I
1
A
FP  
Pin Configuration (top view)  
Reverse voltage  
Junction temperature  
Forward current  
V
3
125  
V
R
6
1
2
3
T
°C  
µA  
V
j
I
50  
FD  
Reverse voltage  
V
10  
RD  
Junction temperature  
Storage temperature range  
Operating temperature range  
Lead soldering temperature (10 sec.)  
Isolation voltage  
T
125  
°C  
°C  
°C  
°C  
j
4
T
-55~125  
-40~85  
260  
stg  
opr  
1. : Anode  
2. : Cathode  
3. : NC  
T
T
sol  
4. : Cathode  
6. : Anode  
BV  
2500  
V
S
rms  
(AC, 1 min., R.H.60%)  
(Note 1)  
(Note 1) Device considered a two terminal device: Pins 1, 2 and 3  
shorted together, and pins 4 and 6 shorted together.  
1
2002-09-25  

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