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TLP591B(LF5) PDF预览

TLP591B(LF5)

更新时间： 2024-11-05 15:54:35
品牌 Logo 应用领域
东芝 - TOSHIBA 光电
页数 文件大小 规格书
4页 152K
描述
Optoelectronic Device:Other, SPECIALTY OPTOELECTRONIC DEVICE

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中文翻译

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TLP591B(LF5) 技术参数

是否Rohs认证： 不符合生命周期：Active
包装说明：PLASTIC, 11-7A9, DIP-5Reach Compliance Code：unknown
风险等级：5.01配置：SINGLE WITH BUILT-IN RESISTOR
JESD-609代码：e0功能数量：1
最高工作温度：85 °C最低工作温度：-25 °C
光电设备类型：OPTOELECTRONIC DEVICE端子面层：Tin/Lead (Sn/Pb)
Base Number Matches：1

TLP591B(LF5) 数据手册

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TLP591B  
TOSHIBA Photocoupler GaAℓAs Ired & Photo−Diode Array  
TLP591B  
Unit: mm  
Telecommunications  
Programmable Controllers  
MOS Gate Drivers  
MOSFET Gate Drivers  
The TOSHIBA TLP591B consists of an aluminum gallium arsenide  
infrared emitting diode optically coupled to a series-connected  
photo−diode array in a six-lead plastic DIP package.  
The TLP591B is suitable for MOS FET gate drivers.  
The TLP591B has an internal shunt resistor to optimize switching  
speed.  
•
UL recognized: UL1577, file no. E67349  
TOSHIBA  
11−7A10  
Weight: 0.39 g (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Forward current  
Symbol  
Rating  
50  
Unit  
mA  
I
F
Forward current derating  
(Ta ≥ 25°C)  
ΔI /°C  
F
−0.5  
mA /°C  
Pulse forward current  
(100 μs pulse, 100 pps)  
I
1
A
FP  
Pin Configuration (top view)  
Reverse voltage  
Junction temperature  
Forward current  
V
3
125  
V
R
6
1
2
3
T
°C  
μA  
V
j
I
50  
FD  
Reverse voltage  
V
10  
RD  
Junction temperature  
Storage temperature range  
Operating temperature range  
Lead soldering temperature (10 sec.)  
Isolation voltage  
T
125  
°C  
°C  
°C  
°C  
j
4
T
−55 to 125  
−40 to 85  
260  
stg  
opr  
1. : Anode  
2. : Cathode  
3. : NC  
4. : Cathode  
6. : Anode  
T
T
sol  
BV  
2500  
V
S
rms  
(AC, 1 min., R.H. ≤ 60%)  
(Note 1)  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if  
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
(Note 1) Device considered a two terminal device: Pins 1, 2 and 3  
shorted together, and pins 4 and 6 shorted together.  
1
2008-12-09  
1234

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