Datasheet > TLP590B_07

TLP590B_07

更新时间： 2024-09-23 03:59:23

品牌	Logo	应用领域
东芝 - TOSHIBA		驱动器栅极电信栅极驱动控制器
页数	文件大小	规格书
5页	174K
描述
Telecommunication Programmable Controllers Mos Gate Driver MOS FET Gate Driver

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数据手册

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TLP590B_07 数据手册

TLP590B

TOSHIBA Photocoupler GaAℓAs Ired & Photo−Diode Array

TLP590B

Telecommunication

Unit in mm

Programmable Controllers

Mos Gate Driver

MOS FET Gate Driver

The TOSHIBA TLP590B consists of an aluminum galium arsenide

infrared emitting diode optically coupled to a series connected photo−

diode array in a six lead plastic DIP package.

TLP590B is suitable for MOS FET gate driver.

•

UL recognized: UL1577, file No. E67349

Short Current

Type

Name

Marking Of

Classification

(min.)

C20

20μA

12μA

TLP590B

10mA

TOSHIBA

11−7A9

Standard

20, blank

Weight: 0.39g

(Note) Application type name for certification test, please

use standard product type name, i.e.

TLP590B(C20): TLP590B

Maximum Ratings (Ta = 25°C)

Pin Configuration(top view)

Characteristics

Forward current

Symbol

Rating

Unit

Forward current derating

(Ta ≥ 25°C)

ΔI / °C

−0.5

mA / °C

Pulse forward current

(100μs pulse, 100 pps)

1. : Anode

2. : Cathode

3. : NC

4. : Cathode

6. : Anode

Reverse voltage

Junction temperature

Foward current

125

°C

μA

Reverse voltage

Junction temperature

Storage temperature range

Operating temperature range

125

°C

−55~125

−40~85

stg

opr

Lead soldering temperature

(10sec.)

sol

260

°C

Isolation voltage

(AC, 1 min., R.H. ≤ 60%) (Note 1)

2500

Vrms

(Note 1) Device considered a two terminal device: Pins 1, 2 and 3

shorted together, and pins 4 and 6 shorted together.

2002-09-25

12 3 4 5

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