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TK80A04K3L PDF预览

TK80A04K3L

更新时间: 2024-11-21 21:15:27
品牌 Logo 应用领域
东芝 - TOSHIBA 局域网开关脉冲晶体管
页数 文件大小 规格书
9页 230K
描述
TRANSISTOR POWER, FET, FET General Purpose Power

TK80A04K3L 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:unknown
风险等级:5.75雪崩能效等级(Eas):665 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (Abs) (ID):80 A
最大漏极电流 (ID):80 A最大漏源导通电阻:0.0035 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):48 W
最大脉冲漏极电流 (IDM):320 A子类别:FET General Purpose Powers
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

TK80A04K3L 数据手册

 浏览型号TK80A04K3L的Datasheet PDF文件第2页浏览型号TK80A04K3L的Datasheet PDF文件第3页浏览型号TK80A04K3L的Datasheet PDF文件第4页浏览型号TK80A04K3L的Datasheet PDF文件第5页浏览型号TK80A04K3L的Datasheet PDF文件第6页浏览型号TK80A04K3L的Datasheet PDF文件第7页 
TK80A04K3L  
MOSFETs Silicon N-channel MOS (U-MOS)  
TK80A04K3L  
1. Applications  
Automotive  
Switching Voltage Regulators  
Motor Drivers  
2. Features  
(1) Low drain-source on-resistance: RDS(ON) = 1.9 m(typ.) (VGS = 10 V)  
(2) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)  
(3) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA)  
3. Packaging and Internal Circuit  
1: Gate  
2: Drain  
3: Source  
TO-220SIS  
4. Absolute Maximum Ratings (Note) (Ta = 25unless otherwise specified)  
Characteristics  
Symbol  
Rating  
Unit  
V
Drain-source voltage  
Gate-source voltage  
Drain current (DC)  
Drain current (pulsed)  
Power dissipation  
VDSS  
VGSS  
ID  
40  
±20  
(Note 1)  
(Note 1)  
80  
A
IDP  
320  
(Tc = 25)  
PD  
48  
W
mJ  
A
Single-pulse avalanche energy  
Avalanche current  
(Note 2)  
EAS  
IAR  
665  
80  
Channel temperature  
Storage temperature  
(Note 3)  
(Note 3)  
Tch  
Tstg  
175  
-55 to 175  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
2012-12-05  
Rev.1.0  
1

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