Datasheet > TK80A08K3

TK80A08K3

更新时间： 2024-02-19 06:09:44

品牌	Logo	应用领域
东芝 - TOSHIBA		局域网开关脉冲晶体管
页数	文件大小	规格书
6页	209K
描述
TRANSISTOR 80 A, 75 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10U1B, SC-67, 3 PIN, FET General Purpose Power

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TK80A08K3 技术参数

生命周期：	Active	零件包装代码：	SC-67
包装说明：	FLANGE MOUNT, R-PSFM-T3	针数：	3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.73	雪崩能效等级（Eas）：	443 mJ
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	75 V
最大漏极电流 (Abs) (ID)：	80 A	最大漏极电流 (ID)：	80 A
最大漏源导通电阻：	0.0045 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PSFM-T3	元件数量：	1
端子数量：	3	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	40 W
最大脉冲漏极电流 (IDM)：	320 A	认证状态：	Not Qualified
子类别：	FET General Purpose Power	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

TK80A08K3 数据手册

TK80A08K3

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)

TK80A08K3

Switching Regulator Applications

Unit: mm

•

Low drain-source ON-resistance: R

= 3.6 mΩ (typ.)

DS (ON)

High forward transfer admittance: |Y | = 200 S

Low leakage current: I

= 10 μA (max) (V

= 75 V)

DSS

Enhancement mode: V = 2.0 to 4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

± 20

GSS

(Note 1)

Drain current

Pulse (Note 1)

320

Drain power dissipation (Tc = 25°C)

1: Gate

2: Drain

3: Source

Single pulse avalanche energy

443

(Note 2)

Avalanche current

JEDEC

JEITA

Repetitive avalanche energy (Note 3)

Channel temperature

°C

SC-67

2-10U1B

150

TOSHIBA

Weight: 1.7 g (typ.)

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

Internal Connection

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

3.125

62.5

°C/W

th (ch-c)

th (ch-a)

Note 1: Ensure that the channel and lead temperatures do not exceed 150°C.

Note 2: = 25 V, T = 25°C, L = 100 μH, I = 80 A, R = 1 Ω

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

2008-03-28

12 3 4 5 6

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与TK80A08K3相关器件

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TK80F04K3L	TOSHIBA	获取价格	Switching Voltage Regulators
TK80F06K3L	TOSHIBA	获取价格	Switching Voltage Regulators
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TK80S04K3L	NXP	获取价格	MOSFETs Silicon N-channel MOS (U-MOS IV)
TK80S04K3L	TOSHIBA	获取价格	EOL announced
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TK80X04K3	TOSHIBA	获取价格	TRANSISTOR 80 A, 40 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-9F1C, S
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