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TK80X04K3(TE24L,Q) PDF预览

TK80X04K3(TE24L,Q)

更新时间： 2024-02-07 23:20:13
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
6页 188K
描述
TRANSISTOR,MOSFET,N-CHANNEL,40V V(BR)DSS,80A I(D),SC-97

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TK80X04K3(TE24L,Q) 技术参数

是否Rohs认证： 符合生命周期：Not Recommended
包装说明：,Reach Compliance Code：unknown
风险等级：5.76配置：Single
最大漏极电流 (Abs) (ID)：80 AFET 技术：METAL-OXIDE SEMICONDUCTOR
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：125 W
子类别：FET General Purpose Power表面贴装：YES
Base Number Matches：1

TK80X04K3(TE24L,Q) 数据手册

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TK80X04K3  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)  
TK80X04K3  
Switching Regulator, DC-DC Converter Applications  
Unit: mm  
Motor Drive Applications  
9.2 MAX.  
7.0 ± 0.2  
0.4 ± 0.1  
4
•
•
•
•
Low drain-source ON-resistance: R  
= 2.7 mΩ (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 150 S (typ.)  
fs  
Low leakage current: I  
= 10 μA (max) (V  
= 40 V)  
DSS  
DS  
Enhancement mode: V = 3.0 to 4.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
2.0 1.5 2.0 2.5  
1
2
3
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
40  
40  
V
V
V
DSS  
3.6 ± 0.2  
1.0 ± 0.2 1.0 ± 0.2  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
±20  
80  
：G  
GSS  
1. GATE  
2. N.C.  
3. SOURSE  
4. DRAIN  
I
DC  
(Note 1)  
D
：S  
：D  
Drain current  
A
Pulse (Note 1)  
I
320  
125  
DP  
JEDEC  
JEITA  
⎯
Drain power dissipation (Tc = 25°C)  
P
W
D
AS  
AR  
Single pulse avalanche energy  
SC-97  
E
123  
mJ  
(Note 2)  
TOSHIBA  
2-9F1C  
Avalanche current  
I
80  
12.5  
A
Weight: 0.74 g (typ.)  
Repetitive avalanche energy (Note 3)  
E
mJ  
°C  
°C  
AR  
Channel temperature  
(Note 4)  
T
175  
ch  
Storage temperature range (Note 4)  
T
stg  
−55 to 175  
4
Thermal Characteristics  
Characteristics  
Symbol  
Max  
1.2  
Unit  
1
Thermal resistance, channel to case  
R
°C/W  
th (ch-c)  
Note 1: Ensure that the channel temperature does not exceed 175°C.  
Note 2: = 25 V, T = 25°C (initial), L = 20 μH, I = 80 A, R = 25 Ω  
Note 3: Repetitive rating: pulse width limited by maximum channel temperature  
3
V
DD  
ch  
AR  
G
Note 4: The definitions of the absolute maximum channel temperature and storage temperatures are based on  
AEC-Q101.  
Note 5: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2009-04-21  
123456

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