TK80D08K3

更新时间： 2024-02-28 17:52:59

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体稳压器开关晶体管功率场效应晶体管脉冲局域网
页数	文件大小	规格书
6页	173K
描述
Switching Regulator Applications

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

TK80D08K3 技术参数

生命周期：	Transferred	包装说明：	ROHS COMPLIANT, 2-10V1A, 3 PIN
针数：	3	Reach Compliance Code：	unknown
风险等级：	5.37	Is Samacsys：	N
雪崩能效等级（Eas）：	443 mJ	外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	75 V
最大漏极电流 (ID)：	80 A	最大漏源导通电阻：	0.0045 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PSFM-T3
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	N-CHANNEL	最大脉冲漏极电流 (IDM)：	320 A
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

TK80D08K3 数据手册

TK80D08K3

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)

TK80D08K3

Switching Regulator Applications

Unit: mm

10.0±0.3

9.5±0.2

•

Low drain-source ON-resistance: R

= 3.6 mΩ (typ.)

DS (ON)

0.6±0.1

High forward transfer admittance: |Y | = 200 S

Ф3.65±0.2

Low leakage current: I

= 10 μA (max) (V

= 75 V)

DSS

Enhancement-mode: V = 2.0 to 4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1.1±0.15

0.75±0.25

Characteristics

Drain-source voltage

Symbol

Rating

Unit

DSS

0.62±0.15

Ф0.2 M

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

+0.25

0.57

DGR

2.54

-0.10

2.53±0.2

±20

GSS

(Note 1)

Drain current

Pulse (Note 1)

320

100

1: Gate

2: Drain (Heat Sink)

3: Source

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

443

(Note 2)

JEDEC

JEITA

⎯

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

°C

TOSHIBA

2-10V1A

150

Weight: 1.35 g (typ.)

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

Internal Connection

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

1.25

83.3

°C/W

th (ch-c)

th (ch-a)

Note 1: Ensure that the channel and lead temperatures do not exceed 150°C.

Note 2: = 25 V, T = 25°C, L = 100 μH, I = 80 A, R = 1 Ω

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

2009-09-29

12 3 4 5 6

中文翻译

下载PDF

与TK80D08K3相关器件

型号	品牌	获取价格	描述	数据表
TK80E06K3A	TOSHIBA	获取价格	Switching Voltage Regulators
TK80F04K3L	TOSHIBA	获取价格	Switching Voltage Regulators
TK80F06K3L	TOSHIBA	获取价格	Switching Voltage Regulators
TK80F08K3	TOSHIBA	获取价格	Swiching Regulator
TK80S04K3L	NXP	获取价格	MOSFETs Silicon N-channel MOS (U-MOS IV)
TK80S04K3L	TOSHIBA	获取价格	EOL announced
TK80S06K3L	TOSHIBA	获取价格	MOSFETs Silicon N-channel MOS (U-MOS )
TK80X04K3	TOSHIBA	获取价格	TRANSISTOR 80 A, 40 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-9F1C, S
TK80X04K3(TE24L)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,40V V(BR)DSS,80A I(D),SC-97
TK80X04K3(TE24L,Q)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,40V V(BR)DSS,80A I(D),SC-97

与TK80D08K3相关文章

共享储能电站：数据驱动与政策引领下的黄金机遇
2024-06-26

8
US1M数据手册解读：产品特性、替换型号推荐
2024-06-26

2
解析BAV99LT1G手册：参数分析、替换型号推荐
2024-06-26

1
解读BSS138PW数据手册：产品特性、电气参数及替换型号推荐
2024-06-26

3

产品中心

服务支持

精选活动

关于我们

帮助中心

TK80D08K3

TK80D08K3 技术参数

TK80D08K3 数据手册

与TK80D08K3相关器件

与TK80D08K3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

TK80D08K3

TK80D08K3 技术参数

TK80D08K3 数据手册

与TK80D08K3相关器件

与TK80D08K3相关文章

您还可以找

您在本页遇到什么问题？