Datasheet > TK60D08J1

TK60D08J1

更新时间： 2024-11-18 08:48:03

品牌	Logo	应用领域
东芝 - TOSHIBA		稳压器开关
页数	文件大小	规格书
6页	191K
描述
Switching Regulator Application

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

TK60D08J1 技术参数

生命周期：	Obsolete	包装说明：	LEAD FREE, 2-10V1A, 3 PIN
针数：	3	Reach Compliance Code：	unknown
风险等级：	5.82	雪崩能效等级（Eas）：	498 mJ
外壳连接：	DRAIN	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	75 V	最大漏极电流 (ID)：	60 A
最大漏源导通电阻：	0.0078 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PSFM-T3	元件数量：	1
端子数量：	3	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	N-CHANNEL
最大脉冲漏极电流 (IDM)：	240 A	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

TK60D08J1 数据手册

TK60D08J1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ)

TK60D08J1

Switching Regulator Application

Unit: mm

•

High-Speed switching

Small gate charge: Q = 86 nC (typ.)

Low drain-source ON resistance: R

= 6.2 mΩ (typ.)

DS (ON)

High forward transfer admittance: |Y | = 120 S (typ.)

Low leakage current: I

= 10 μA (max) (V

= 75 V)

DSS

Enhancement-mode: V = 1.1 to 2.3 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

±20

GSS

(Note 1)

Drain current

Pulse (Note 1)

240

140

Drain power dissipation (Tc = 25°C)

JEDEC

JEITA

Single pulse avalanche energy

498

(Note 2)

TOSHIBA

2-10V1A

Avalanche current

9.2

Weight: 1.35 g (typ.)

Repetitive avalanche energy (Note 3)

Channel temperature

°C

150

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability

test report and estimated failure rate, etc).

Internal Connection

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

0.89

83.3

°C/W

th (ch-c)

th (ch-a)

Note 1: Ensure that the channel & lead temperature does not exceed 150°C.

Note 2: = 25 V, T = 25°C, L = 200 μH, I = 60 A, R = 1Ω

Note 3: Repetitive rating; pulse width limited by maximum channel temperature.

This transistor is an electrostatic sensitive device. Handle with care.

2009-09-29

12 3 4 5 6

中文翻译

下载PDF

与TK60D08J1相关器件

型号	品牌	获取价格	描述	数据表
TK60D1A1B1T2RE	GREATECS	获取价格	Sealed Ultraminiature Toggle Switches
TK60D1A1B1T6RE	GREATECS	获取价格	Sealed Ultraminiature Toggle Switches
TK60D1A1B1T7RE	GREATECS	获取价格	Sealed Ultraminiature Toggle Switches
TK60F08K3	TOSHIBA	获取价格	Switching Voltage Regulators
TK60F10N1L	TOSHIBA	获取价格	Not Recommended for New Design
TK60J25D	TOSHIBA	获取价格	Switching Voltage Regulators
TK60P03M1	FREESCALE	获取价格	MOSFETs Silicon N-Channel MOS (U-MOSî±-H)
TK60P03M1	TOSHIBA	获取价格	DC-DC Converters
TK60S06K3L	TOSHIBA	获取价格	Switching Voltage Regulators
TK60S10N1L	TOSHIBA	获取价格	N-ch MOSFET, 100 V, 60 A, 0.00611 Ω@10V, DPAK

与TK60D08J1相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

37

产品中心

服务支持

精选活动

关于我们

帮助中心

TK60D08J1

TK60D08J1 技术参数

TK60D08J1 数据手册

与TK60D08J1相关器件

与TK60D08J1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

TK60D08J1

TK60D08J1 技术参数

TK60D08J1 数据手册

与TK60D08J1相关器件

与TK60D08J1相关文章

您还可以找

您在本页遇到什么问题？