TK60D08J1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ)
TK60D08J1
Switching Regulator Application
Unit: mm
•
•
•
•
•
•
High-Speed switching
Small gate charge: Q = 86 nC (typ.)
g
Low drain-source ON resistance: R
= 6.2 mΩ (typ.)
DS (ON)
High forward transfer admittance: |Y | = 120 S (typ.)
fs
Low leakage current: I
= 10 μA (max) (V
= 75 V)
DSS
DS
Enhancement-mode: V = 1.1 to 2.3 V (V
= 10 V, I = 1 mA)
D
th
DS
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Symbol
Rating
Unit
V
75
75
V
V
V
DSS
Drain-gate voltage (R
Gate-source voltage
= 20 kΩ)
V
GS
DGR
V
±20
60
GSS
DC
(Note 1)
I
D
Drain current
A
Pulse (Note 1)
I
240
140
DP
Drain power dissipation (Tc = 25°C)
P
W
JEDEC
JEITA
-
D
AS
AR
Single pulse avalanche energy
-
E
498
mJ
(Note 2)
TOSHIBA
2-10V1A
Avalanche current
I
60
9.2
A
Weight: 1.35 g (typ.)
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
T
150
ch
Storage temperature range
T
−55 to 150
stg
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability
test report and estimated failure rate, etc).
Internal Connection
Thermal Characteristics
2
Characteristics
Symbol
Max
Unit
1
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R
0.89
83.3
°C/W
°C/W
th (ch-c)
R
th (ch-a)
3
Note 1: Ensure that the channel & lead temperature does not exceed 150°C.
Note 2: = 25 V, T = 25°C, L = 200 μH, I = 60 A, R = 1Ω
V
DD
ch
AR
G
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Handle with care.
1
2009-09-29