Datasheet > TK60P03M1

TK60P03M1

更新时间： 2022-03-18 11:42:49

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器
页数	文件大小	规格书
9页	236K
描述
DC-DC Converters

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中文翻译

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数据手册

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TK60P03M1 数据手册

TK60P03M1

MOSFETs Silicon N-Channel MOS (U-MOS-H)

TK60P03M1

1. Applications

•

DC-DC Converters

•

Desktop Computers

2. Features

(1) High-speed switching

(2) Low gate charge: QSW = 13 nC (typ.)

(3) Low drain-source on-resistance: RDS(ON) = 4.6 mΩ (typ.) (VGS = 10 V)

(4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)

(5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA)

3. Packaging and Internal Circuit

1: Gate

2: Drain (heatsink)

3: Source

DPAK

4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Drain-gate voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

VDSS

VDGR

VGSS

(RGS = 20 kΩ)

±20

(Note 1)

IDP

120

(Tc = 25)

Single-pulse avalanche energy

Avalanche current

(Note 2)

EAS

IAR

Channel temperature

Storage temperature

Tch

150

-55 to 150



Tstg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2011-07-22

Rev.2.0

12 3 4 5 6 7...9

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