TK60F08K3
MOSFETs Silicon N-channel MOS (U-MOS)
TK60F08K3
1. Applications
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•
•
•
Automotive
Switching Voltage Regulators
DC-DC Converters
Motor Drivers
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 6.5 mΩ (typ.) (VGS = 10 V)
(2) Low leakage current: IDSS = 10 µA (max) (VDS = 75 V)
(3) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
1: Gate
2: Drain (Heatsink)
3: Source
TO-220SM(W)
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
V
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
VDSS
VGSS
ID
75
±20
(Note 1)
(Note 1)
60
A
IDP
180
(Tc = 25)
PD
150
W
mJ
A
Single-pulse avalanche energy
Avalanche current
(Note 2)
EAS
IAR
111
60
Channel temperature
Storage temperature
(Note 3)
(Note 3)
Tch
Tstg
175
-55 to 175
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
2012-06-21
Rev.1.0
1