TK60P03M1
MOSFETs Silicon N-Channel MOS (U-MOS-H)
1. Applications
•
DC-DC Converters
•
Desktop Computers
2. Features
(1) High-speed switching
(2) Low gate charge: QSW = 13 nC (typ.)
(3) Low drain-source on-resistance: RDS(ON) = 4.6 mΩ (typ.) (VGS = 10 V)
(4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
(5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA)
3. Packaging and Internal Circuit
1: Gate
2: Drain (heatsink)
3: Source
DPAK
4. Absolute Maximum Ratings (Note) (T = 25 unless otherwise specified)
a
Characteristics
Symbol
Rating
Unit
V
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
VDSS
VDGR
VGSS
ID
30
30
(RGS = 20 kΩ)
±20
60
(Note 1)
(Note 1)
A
IDP
120
63
(Tc = 25)
PD
W
mJ
A
Single-pulse avalanche energy
Avalanche current
(Note 2)
EAS
IAR
94
60
Channel temperature
Storage temperature
Tch
150
-55 to 150
Tstg
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
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