5秒后页面跳转
TK60F08K3 PDF预览

TK60F08K3

更新时间: 2022-03-18 22:30:26
品牌 Logo 应用领域
东芝 - TOSHIBA 稳压器开关
页数 文件大小 规格书
10页 283K
描述
Switching Voltage Regulators

TK60F08K3 数据手册

 浏览型号TK60F08K3的Datasheet PDF文件第1页浏览型号TK60F08K3的Datasheet PDF文件第2页浏览型号TK60F08K3的Datasheet PDF文件第4页浏览型号TK60F08K3的Datasheet PDF文件第5页浏览型号TK60F08K3的Datasheet PDF文件第6页浏览型号TK60F08K3的Datasheet PDF文件第7页 
TK60F08K3  
6. Electrical Characteristics  
6.1. Static Characteristics (Ta = 25unless otherwise specified)  
Characteristics  
Gate leakage current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
IGSS  
IDSS  
VGS = ±20 V, VDS = 0 V  
±1  
µA  
Drain cut-off current  
VDS = 75 V, VGS = 0 V  
10  
Drain-source breakdown voltage  
Drain-source breakdown voltage (Note 4)  
Gate threshold voltage  
V(BR)DSS ID = 10 mA, VGS = 0 V  
V(BR)DSX ID = 10 mA, VGS = -20 V  
75  
45  
V
Vth  
VDS = 10 V, ID = 1 mA  
VGS = 10 V, ID = 30 A  
3.0  
4.0  
Drain-source on-resistance  
RDS(ON)  
6.5  
8.5  
mΩ  
Note 4: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-  
source breakdown voltage is lowered in this mode.  
6.2. Dynamic Characteristics (Ta = 25unless otherwise specified)  
Characteristics  
Input capacitance  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
pF  
Ciss  
Crss  
Coss  
tr  
VDS = 10 V, VGS = 0 V, f = 1 MHz  
3600  
350  
500  
16  
Reverse transfer capacitance  
Output capacitance  
Switching time (rise time)  
Switching time (turn-on time)  
Switching time (fall time)  
Switching time (turn-off time)  
See Fig. 6.2.1  
ns  
ton  
33  
tf  
13  
toff  
63  
Fig. 6.2.1 Switching Time Test Circuit  
6.3. Gate Charge Characteristics (Ta = 25unless otherwise specified)  
Characteristics  
Symbol  
Qg  
Test Condition  
Min  
Typ.  
75  
Max  
Unit  
nC  
Total gate charge (gate-source plus  
gate-drain)  
VDD 60 V, VGS = 10 V, ID = 60 A  
Gate-source charge  
Gate-drain charge  
Qgs  
Qgd  
44  
31  
6.4. Source-Drain Characteristics (Ta = 25unless otherwise specified)  
Characteristics  
Reverse drain current (DC)  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
A
(Note 5)  
(Note 5)  
IDR  
IDRP  
VDSF  
60  
Reverse drain current (pulsed)  
Diode forward voltage  
180  
-1.2  
IDR = 60 A, VGS = 0 V  
-0.9  
V
Reverse recovery time  
trr  
IDR = 60 A, VGS = 0 V  
-dIDR/dt = 50 A/µs  
50  
40  
ns  
Reverse recovery charge  
Qrr  
nC  
Note 5: Ensure that the channel temperature does not exceed 175.  
2012-06-21  
Rev.1.0  
3

与TK60F08K3相关器件

型号 品牌 获取价格 描述 数据表
TK60F10N1L TOSHIBA

获取价格

Not Recommended for New Design
TK60J25D TOSHIBA

获取价格

Switching Voltage Regulators
TK60P03M1 FREESCALE

获取价格

MOSFETs Silicon N-Channel MOS (U-MOS-H)
TK60P03M1 TOSHIBA

获取价格

DC-DC Converters
TK60S06K3L TOSHIBA

获取价格

Switching Voltage Regulators
TK60S10N1L TOSHIBA

获取价格

N-ch MOSFET, 100 V, 60 A, 0.00611 Ω@10V, DPAK
TK60S1A1B1T2RE GREATECS

获取价格

Sealed Ultraminiature Toggle Switches
TK60S1A1B1T6RE GREATECS

获取价格

Sealed Ultraminiature Toggle Switches
TK60S1A1B1T7RE GREATECS

获取价格

Sealed Ultraminiature Toggle Switches
TK61023 TOKO

获取价格

VOLTAGE DETECTOR