TK60F08K3
6. Electrical Characteristics
6.1. Static Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
IGSS
IDSS
VGS = ±20 V, VDS = 0 V
±1
µA
Drain cut-off current
VDS = 75 V, VGS = 0 V
10
Drain-source breakdown voltage
Drain-source breakdown voltage (Note 4)
Gate threshold voltage
V(BR)DSS ID = 10 mA, VGS = 0 V
V(BR)DSX ID = 10 mA, VGS = -20 V
75
45
V
Vth
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 30 A
3.0
4.0
Drain-source on-resistance
RDS(ON)
6.5
8.5
mΩ
Note 4: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-
source breakdown voltage is lowered in this mode.
6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Input capacitance
Symbol
Test Condition
Min
Typ.
Max
Unit
pF
Ciss
Crss
Coss
tr
VDS = 10 V, VGS = 0 V, f = 1 MHz
3600
350
500
16
Reverse transfer capacitance
Output capacitance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
See Fig. 6.2.1
ns
ton
33
tf
13
toff
63
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Qg
Test Condition
Min
Typ.
75
Max
Unit
nC
Total gate charge (gate-source plus
gate-drain)
VDD ≈ 60 V, VGS = 10 V, ID = 60 A
Gate-source charge
Gate-drain charge
Qgs
Qgd
44
31
6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Reverse drain current (DC)
Symbol
Test Condition
Min
Typ.
Max
Unit
A
(Note 5)
(Note 5)
IDR
IDRP
VDSF
60
Reverse drain current (pulsed)
Diode forward voltage
180
-1.2
IDR = 60 A, VGS = 0 V
-0.9
V
Reverse recovery time
trr
IDR = 60 A, VGS = 0 V
-dIDR/dt = 50 A/µs
50
40
ns
Reverse recovery charge
Qrr
nC
Note 5: Ensure that the channel temperature does not exceed 175.
2012-06-21
Rev.1.0
3