Datasheet > TK5P50D

TK5P50D

更新时间： 2024-11-18 12:24:23

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管开关脉冲
页数	文件大小	规格书
5页	311K
描述
Silicon N Channel MOS Type (Ï-MOSâ¦)

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TK5P50D 数据手册

TK5P50D

Silicon N Channel MOS Type (π-MOSⅦ)

Switching Regulator Applications

Unit: mm

6.6 ± 0.2

5.34 ± 0.13

•

Low drain-source ON-resistance: R

High forward transfer admittance: ⎪Y ⎪ = 3.0 S (typ.)

= 1.3 Ω (typ.)

DS (ON)

0.58MAX

Low leakage current: I

= 10 μA (max) (V

= 500 V)

DSS

Enhancement-mode: V = 2.4 to 4.4 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1.14MAX

2.29

Characteristics

Drain-source voltage

Symbol

Rating

Unit

0.76 ± 0.12

500

±30

DSS

Gate-source voltage

GSS

(Note 1)

Drain current

Pulse (t = 1 ms)

1. GATE

2. DRAIN

（HEAT SINK）

3. SOURCE

(Note 1)

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

128

(Note 2)

JEDEC

JEITA

⎯

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

°C

TOSHIBA

2-7K1A

150

Weight : 0.36 g (typ.)

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

1.56

125

°C/W

th (ch-c)

th (ch-a)

Note 1: Please use devices on conditions that the channel temperature is below 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 8.67 mH, R = 25 Ω, I = 5 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic sensitive device. Please handle with caution.

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