Datasheet > TK60A08J1

TK60A08J1

更新时间： 2024-01-18 07:17:30

品牌	Logo	应用领域
东芝 - TOSHIBA		稳压器开关
页数	文件大小	规格书
6页	184K
描述
Switching Regulator Application

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TK60A08J1 技术参数

生命周期：	Lifetime Buy	零件包装代码：	SC-67
包装说明：	FLANGE MOUNT, R-PSFM-T3	针数：	3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.35	雪崩能效等级（Eas）：	498 mJ
外壳连接：	ISOLATED	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	75 V	最大漏极电流 (Abs) (ID)：	60 A
最大漏极电流 (ID)：	60 A	最大漏源导通电阻：	0.0093 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PSFM-T3
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	45 W	最大脉冲漏极电流 (IDM)：	240 A
认证状态：	Not Qualified	子类别：	FET General Purpose Power
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

TK60A08J1 数据手册

TK60A08J1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ)

TK60A08J1

Switching Regulator Application

Unit: mm

•

High-Speed switching

Small gate charge: Q_g= 86 nC (typ.)

Low drain-source ON resistance: R

= 6.2 mΩ (typ.)

DS (ON)

High forward transfer admittance: |Y | = 120 S (typ.)

Low leakage current: I

= 10 μA (max) (V

= 75 V)

DSS

Enhancement-mode: V = 1.1 to 2.3 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

±20

GSS

1: Gate

2: Drain

3: Source

(Note 1)

Drain current

Pulse (Note 1)

240

Drain power dissipation (Tc = 25°C)

JEDEC

JEITA

Single pulse avalanche energy

498

(Note 2)

SC-67

2-10U1B

Avalanche current

2.9

TOSHIBA

Weight: 1.7 g (typ.)

Repetitive avalanche energy (Note 3)

Channel temperature

°C

150

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability

test report and estimated failure rate, etc).

Internal Connection

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

2.78

62.5

°C/W

th (ch-c)

th (ch-a)

Note 1: Ensure that the channel & lead temperature does not exceed 150°C.

Note 2: = 25 V, T = 25°C, L = 200 μH, I = 60 A, R = 1 Ω

Note 3: Repetitive rating; pulse width limited by maximum channel temperature.

This transistor is an electrostatic sensitive device. Handle with care.

2009-09-29

12 3 4 5 6

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