Datasheet > TK56E12N1

TK56E12N1

更新时间： 2024-11-05 12:23:03

品牌	Logo	应用领域
东芝 - TOSHIBA		稳压器开关
页数	文件大小	规格书
9页	262K
描述
Switching Voltage Regulators

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TK56E12N1 数据手册

TK56E12N1

MOSFETs Silicon N-channel MOS (U-MOS-H)

TK56E12N1

1. Applications

•

Switching Voltage Regulators

2. Features

(1) Low drain-source on-resistance: RDS(ON) = 5.8 mΩ (typ.) (VGS = 10 V)

(2) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V)

(3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA)

3. Packaging and Internal Circuit

1: Gate

2: Drain (heatsink)

3: Source

TO-220

2012-08-09

Rev.1.0

12 3 4 5 6 7...9

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