Datasheet > TK58E06N1

TK58E06N1

更新时间： 2024-11-05 11:58:59

品牌	Logo	应用领域
东芝 - TOSHIBA		稳压器开关
页数	文件大小	规格书
9页	250K
描述
Switching Voltage Regulators

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TK58E06N1 数据手册

TK58E06N1

MOSFETs Silicon N-channel MOS (U-MOS-H)

TK58E06N1

1. Applications

•

Switching Voltage Regulators

2. Features

(1) Low drain-source on-resistance: RDS(ON) = 4.4 mΩ (typ.) (VGS = 10 V)

(2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)

(3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA)

3. Packaging and Internal Circuit

1: Gate

2: Drain (heatsink)

3: Source

TO-220

2012-08-03

Rev.2.0

12 3 4 5 6 7...9

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CSD18532KCS	TI	功能相似	60-V, N-Channel NexFET Power MOSFETs

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