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TK10J80E

更新时间： 2024-11-06 14:56:51

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TK10J80E 数据手册

TK10J80E

MOSFETs Silicon N-Channel MOS (π-MOS)

TK10J80E

1. Applications

•

Switching Voltage Regulators

2. Features

(1) Low drain-source on-resistance: RDS(ON) = 0.7 Ω (typ.)

(2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V)

(3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA)

3. Packaging and Internal Circuit

1: Gate

2: Drain (Heatsink)

3: Source

TO-3P(N)

Start of commercial production

2013-08

2014-02-28

Rev.4.0

12 3 4 5 6 7...9

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