Datasheet > TK10P60W

TK10P60W

更新时间： 2024-11-06 11:59:35

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飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
9页	345K
描述
MOSFETs Silicon N-Channel MOS (DTMOSî¯)

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TK10P60W 数据手册

TK10P60W

MOSFETs Silicon N-Channel MOS (DTMOS)

1. Applications

•

Switching Voltage Regulators

2. Features

(1) Low drain-source on-resistance: R_DS(ON)= 0.327 Ω (typ.)

by used to Super Junction Structure : DTMOS

(2) Easy to control Gate switching

(3) Enhancement mode: V_th= 2.7 to 3.7 V (V_DS= 10 V, I_D= 0.5 mA)

3. Packaging and Internal Circuit

1: Gate

2: Drain (Heatsink)

3: Source

DPAK

4. Absolute Maximum Ratings (Note) (T = 25 unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

V_DSS

V_GSS

I_D

600

±30

(Note 1)

9.7

I_DP

38.8

(T_c= 25)

P_D

Single-pulse avalanche energy

Avalanche current

(Note 2)

E_AS

I_AR

121

2.5

Reverse drain current (DC)

Reverse drain current (pulsed)

Channel temperature

(Note 1)

I_DR

9.7

I_DRP

T_ch

38.8

150



Storage temperature

T_stg

-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

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