Datasheet > TK10X40D

TK10X40D

更新时间： 2024-11-30 14:57:51

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	250K
描述
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数据手册

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TK10X40D 数据手册

TK10X40D

MOSFETs Silicon N-Channel MOS (π-MOS)

TK10X40D

1. Applications

•

Switching Voltage Regulators

2. Features

(1) Low drain-source on-resistance: RDS(ON) = 0.46 Ω (typ.)

(2) High forward transfer admittance: |Yfs| = 5.0 S (typ.)

(3) Low leakage current: IDSS = 10 µA (max) (VDS = 400 V)

(4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

3. Packaging and Internal Circuit

1: Gate (G)

2: N.C.

3: Source (S)

4: Drain (D) (Heatsink)

TFP

4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

VDSS

VGSS

400

±30

(Note 1)

IDP

(Tc = 25)

125

Single-pulse avalanche energy

Avalanche current

(Note 2)

(Note 3)

EAS

IAR

337

Repetitive avalanche energy

Channel temperature

EAR

Tch

12.5

150



Storage temperature

Tstg

-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

2009-10

2013-12-25

Rev.2.0

12 3 4 5 6 7...9

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