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TISP4082LPR

更新时间： 2024-09-15 18:53:55
品牌 Logo 应用领域
伯恩斯 - BOURNS /
页数 文件大小 规格书
7页 132K
描述
Silicon Surge Protector, 82V V(BO) Max, 2.5A, PLASTIC, TO-92, 3 PIN

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中文翻译

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TISP4082LPR 技术参数

生命周期：Obsolete零件包装代码：TO-92
包装说明：CYLINDRICAL, O-PBCY-T3针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.30.00.80风险等级：5.69
最大转折电压：82 V配置：SINGLE
JESD-30 代码：O-PBCY-T3通态非重复峰值电流：2.5 A
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：CYLINDRICAL认证状态：Not Qualified
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：BOTTOM触发设备类型：SILICON SURGE PROTECTOR
Base Number Matches：1

TISP4082LPR 数据手册

 浏览型号TISP4082LPR的Datasheet PDF文件第2页浏览型号TISP4082LPR的Datasheet PDF文件第3页浏览型号TISP4082LPR的Datasheet PDF文件第4页浏览型号TISP4082LPR的Datasheet PDF文件第5页浏览型号TISP4082LPR的Datasheet PDF文件第6页浏览型号TISP4082LPR的Datasheet PDF文件第7页 
TISP4082LP  
SYMMETRICAL TRANSIENT  
VOLTAGE SUPPRESSORS  
Copyright © 1997, Power Innovations Limited, UK  
MAY 1996 - REVISED SEPTEMBER 1997  
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION  
●
Ion-Implanted Breakdown Region  
Precise and Stable Voltage  
LP PACKAGE  
(TOP VIEW)  
Low Voltage Overshoot under Surge  
A(T)  
NC  
1
2
3
V(Z)  
V(BO)  
DEVICE  
B(R)  
V
V
‘4082LP  
58  
82  
MDTRAB  
NC - No internal connection  
●
●
Planar Passivated Junctions  
Low Off-State Current < 10 µA  
LP PACKAGE  
WITH FORMED LEADS  
(TOP VIEW)  
Rated for International Surge Wave Shapes  
A(T)  
NC  
ITSP  
WAVE SHAPE  
STANDARD  
1
2
3
A
10/700 µs  
CCITT IX K17  
25  
B(R)  
●
Package Options  
MD4XAF  
NC - No internal connection  
PACKAGE  
LP  
PACKING  
Bulk  
PART # SUFFIX  
None  
R
device symbol  
LP with fomed leads  
Tape and Reel  
description  
The TISP4082LP is designed specifically for  
telephone equipment protection against lightning  
and transients induced by a.c. power lines.  
These devices consist of  
a
bidirectional  
suppressor element connecting the A and B  
terminals. They will suppress inter-wire voltage  
transients.  
Transients are initially clipped by zener action  
until the voltage rises to the breakover level,  
which causes the device to crowbar. The high  
crowbar holding current prevents d.c. latchup as  
the transient subsides.  
These monolithic protection devices are  
fabricated in ion-implanted planar structures to  
ensure precise and matched breakover control  
and are virtually transparent to the system in  
normal operation.  
P R O D U C T  
I N F O R M A T I O N  
Information is current as of publication date. Products conform to specifications in accordance  
with the terms of Power Innovations standard warranty. Production processing does not  
necessarily include testing of all parameters.  
1
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