TISP4070M3AJ THRU TISP4115M3AJ,
TISP4125M3AJ THRU TISP4220M3AJ,
TISP4240M3AJ THRU TISP4395M3AJ
T
N
A
I
L
P
S
M
N
E
O
O
L
I
C
B
S
S
A
R
H
L
E
I
o
*R
V
A
V
A
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4xxxM3AJ Overvoltage Protector Series
4 kV 10/700, 100 A 5/310 ITU-T K.20/21 rating
SMAJ Package (Top View)
SMA (DO-214AC) Package
25% Smaller Placement Area than SMB
Low Differential Capacitance .......................................... 39 pF
R (B)
1
2 T (A)
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
MDXXCCE
V
V
DRM
(BO)
Device
Device Symbol
V
V
T
‘4070
‘4080
‘4090
‘4095
‘4115
‘4125
‘4145
‘4165
‘4180
‘4200
‘4220
‘4240
‘4250
‘4265
‘4290
‘4300
‘4320
‘4350
‘4360
‘4395
58
65
68
75
90
70
80
90
95
115
125
145
165
180
200
220
240
250
265
290
300
320
350
360
395
SD4XAA
100
120
135
145
155
160
180
190
200
220
230
240
275
290
320
R
T
erminals T and R correspond to the
alternative line designators of A and B
Rated for International Surge Wave Shapes
I
TSP
A
Wave Shape
Standard
2/10 µs
8/20 µs
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
300
220
120
100
75
10/160 µs
10/700 µs
10/560 µs
10/1000 µs
ITU-T K.20/21/45
FCC Part 68
GR-1089-CORE
50
............................................ UL Recognized Components
How To Order
For Standard
For Lead Free
Termination Finish Termination Finish
Order As
Order As
Device
Package
Carrier
Embossed Tape Reeled TISP4xxxM3AJR TISP4xxxM3AJR-S
TISP4xxxM3AJ AJ(J-Bend DO-214AC/SMA)
Insert xxx value corresponding to protection voltages of 070, 080, 095, etc.
Description
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning
flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used
for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of
devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the
diverted current subsides.
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
AUGUST 2001 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.