Datasheet > TISP3125F3

TISP3125F3

更新时间： 2024-11-18 22:34:27

品牌	Logo	应用领域
POINN		/
页数	文件大小	规格书
17页	454K
描述
DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

TISP3125F3 数据手册

TISP3125F3, TISP3150F3, TISP3180F3

DUAL SYMMETRICAL TRANSIENT

VOLTAGE SUPPRESSORS

MARCH 1994 - REVISED SEPTEMBER 1997

TELECOMMUNICATION SYSTEM SECONDARY PROTECTION

●

Ion-Implanted Breakdown Region

Precise and Stable Voltage

D PACKAGE

(TOP VIEW)

Low Voltage Overshoot under Surge

V_DRMV_(BO)

DEVICE

‘3125F3

‘3150F3

‘3180F3

100

120

145

125

150

180

MDXXAE

NC - No internal connection

P PACKAGE

(TOP VIEW)

●

Planar Passivated Junctions

Low Off-State Current < 10 µA

Rated for International Surge Wave Shapes

I_TSP

WAVE SHAPE

STANDARD

175

120

2/10 µs

8/20 µs

FCC Part 68

ANSI C62.41

FCC Part 68

RLM 88

MDXXAF

Specified T terminal ratings require connection of pins 1 and 8.

Specified R terminal ratings require connection of pins 4 and 5.

10/160 µs

10/560 µs

0.5/700 µs

SL PACKAGE

(TOP VIEW)

FTZ R12

10/700 µs

VDE 0433

CCITT IX K17/K20

REA PE-60

10/1000 µs

●

Surface Mount and Through-Hole Options

MDXXAG

MD23AA

PACKAGE

Small-outline

Small-outline taped

and reeled

PART # SUFFIX

device symbol

Plastic DIP

Single-in-line

●

UL Recognized, E132482

description

These medium voltage dual symmetrical

SD3XAA

transient voltage suppressor devices are

designed to protect ISDN and telecommunication

applications with ground backed ringing against

transients caused by lightning strikes and a.c.

power lines. Offered in three voltage variants to

meet battery and protection requirements they

are guaranteed to suppress and withstand the

listed international lightning surges in both

polarities. Transients are initially clipped by

breakdown clamping until the voltage rises to the

breakover level, which causes the device to

Terminals T, R and G correspond to the

alternative line designators of A, B and C

crowbar. The high crowbar holding current

prevents d.c. latchup as the current subsides.

These monolithic protection devices are

fabricated in ion-implanted planar structures to

P R O D U C T

I N F O R M A T I O N

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6 7...17

中文翻译

下载PDF

与TISP3125F3相关器件

型号	品牌	获取价格	描述	数据表
TISP3125F3D	TI	获取价格	125V, 4A, SILICON SURGE PROTECTOR, SOP-8
TISP3125F3DR	TI	获取价格	125V, 4A, SILICON SURGE PROTECTOR, SOP-8
TISP3125F3DR-S	BOURNS	获取价格	Silicon Surge Protector, 125V V(BO) Max, 4.3A, MS-012AA, ROHS COMPLIANT, SOP-8
TISP3125F3P	TI	获取价格	125V, 6A, SILICON SURGE PROTECTOR, PLASTIC, DIP-8
TISP3125F3P	BOURNS	获取价格	Silicon Surge Protector, 125V V(BO) Max, 5.7A, MS-001BA, PLASTIC, D008, MS-001, DIP-8
TISP3125F3P-S	BOURNS	获取价格	Silicon Surge Protector, 125V V(BO) Max, 5.7A, MS-001BA, LEAD FREE, PLASTIC, D008, MS-001,
TISP3125F3SL	TI	获取价格	125V, 6A, SILICON SURGE PROTECTOR, SOP-8
TISP3125F3SL	BOURNS	获取价格	Silicon Surge Protector, 125V V(BO) Max, 7.1A, SIP-3
TISP3125F3SL-S	BOURNS	获取价格	Silicon Surge Protector, 125V V(BO) Max, 7.1A, ROHS COMPLIANT, SIP-3
TISP3125H3	BOURNS	获取价格	DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

与TISP3125F3相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

23
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

15
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

45
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

45

产品中心

服务支持

精选活动

关于我们

帮助中心

TISP3125F3

TISP3125F3 数据手册

与TISP3125F3相关器件

与TISP3125F3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

TISP3125F3

TISP3125F3 数据手册

与TISP3125F3相关器件

与TISP3125F3相关文章

您还可以找

您在本页遇到什么问题？