生命周期: | Active | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | 风险等级: | 5.58 |
最大集电极电流 (IC): | 3 A | 集电极-发射极最大电压: | 80 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 10 |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | NPN |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 3 MHz | Base Number Matches: | 1 |
类别: | Diodes | 极性: | NPN |
V(BR)CEO (V) min.: | 80 | IC (A): | 3 |
hFE min: | 10 | hFE max: | 75 |
Condition1_VCE (V): | 4 | Condition1_IC (mA): | 3000 |
VCE (sat) (V): | 1.2 | Condition2_IC (mA): | 3000 |
Condition2_IB (mA): | 375 | fT (MHz) min.: | 3 |
PD (W) max.: | 2 | AEC Qualified: | No |
最高工作温度: | 150 | 最低工作温度: | -65 |
MSL等级: | 3 | 生命周期: | Active |
是否无铅: | Yes | 符合Reach: | Yes |
符合RoHS: | Yes | ECCN代码: | EAR99 |
Package Outlines: | TO-263 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TIP31-B | BL Galaxy Electrical |
获取价格 |
40V,3A,Medium Power PNP Bipolar Transistor | |
TIP31B(TO-220AB) | BL Galaxy Electrical |
获取价格 |
80V,3A,Medium Power NPN Bipolar Transistor | |
TIP31B16 | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti | |
TIP31B16A | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti | |
TIP31B-6203 | RENESAS |
获取价格 |
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti | |
TIP31B-6255 | RENESAS |
获取价格 |
5A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB | |
TIP31B-6258 | RENESAS |
获取价格 |
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti | |
TIP31B-6261 | RENESAS |
获取价格 |
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti | |
TIP31B-6263 | RENESAS |
获取价格 |
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti | |
TIP31B-6264 | RENESAS |
获取价格 |
5A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB |