SEMICONDUCTOR TECHNICAL DATA
. . . designed for use in general purpose amplifier and switching applications.
•
Collector–Emitter Saturation Voltage —
= 1.2 Vdc (Max) @ I = 3.0 Adc
Collector–Emitter Sustaining Voltage —
V
CE(sat)
C
•
V
V
V
= 60 Vdc (Min) — TIP31A, TIP32A
= 80 Vdc (Min) — TIP31B, TIP32B
= 100 Vdc (Min) — TIP31C, TIP32C
CEO(sus)
CEO(sus)
CEO(sus)
•
•
High Current Gain — Bandwidth Product
= 3.0 MHz (Min) @ I = 500 mAdc
Compact TO–220 AB Package
f
T
C
*Motorola Preferred Device
3 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
*MAXIMUM RATINGS
TIP31A TIP318 TIP31C
TIP32A TIP32B TIP32C
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
Unit
Vdc
Vdc
Vdc
Adc
60–80–100 VOLTS
40 WATTS
V
CEO
60
60
80
80
100
100
V
CB
V
EB
5.0
Collector Current — Continuous
Peak
I
C
3.0
5.0
Base Current
I
B
1.0
Adc
Total Power Dissipation
P
D
@ T = 25 C
40
0.32
Watts
W/ C
C
Derate above 25 C
Total Power Dissipation
P
D
@ T = 25 C
2.0
0.016
Watts
W/ C
A
Derate above 25 C
CASE 221A–06
TO–220AB
Unclamped Inductive
Load Energy (1)
E
32
mJ
Operating and Storage Junction
Temperature Range
T , T
–65 to +150
C
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
62.5
Unit
C/W
C/W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
R
θJA
3.125
θJC
(1) I = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, V
= 10 V, R
= 100 Ω..
BE
C
CC
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
3–873
Motorola Bipolar Power Transistor Device Data