Datasheet > TIP31B

TIP31B

更新时间： 2024-11-06 03:59:43

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描述
Plastic-Encapsulated Transistors

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中文翻译

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TIP31B 数据手册

Transys

Electronics

I M I T E D

TO-220 Plastic-Encapsulated Transistors

TIP31/31A/31B/31C TRANSISTOR (NPN)

FEATURES

TO-220

Power dissipation

1. BASE

P_CM:

W (Tamb=25℃)

2. COLLECTOR

3. EMITTER

Collector current

I_CM:

Collector-base voltage

V_(BR)CBO

1 2 3

TIP31: 40

TIP31A: 60

TIP31B: 80

TIP31C: 100 V

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

31A

31B

31C

V(BR)_CBO

Ic= 100 µA, I_E=0

100

Collector-emitter breakdown voltage

31A

31B

31C

V(BR)_CEO

V(BR)_EBO

I_CBO

Ic= 30 mA, I_B=0

I_E= 100µA, I_C=0

100

Emitter-base breakdown voltage

Collector cut-off current

V_CB= 40V, I_E=0

V_CB= 60V, I_E=0

V_CB= 80V, I_E=0

V_CB= 100V, I_E=0

31A

31B

31C

0.2

V_CE= 30V , I_B= 0

0.3

Collector cut-off curremt

31/31A

31B/31C

I_CEO

V_CE= 60V , I_B= 0

I_EBO

V_EB=5V, I_C=0

Emitter cut-off current

DC current gain

h_FE(1)

V_CE= 4V, I_C= 3A

V_CE= 4V, I_C= 1A

h_FE(2)

V_CE(sat)

V_BE(on)

f_T

I_C=3A, I_B=375mA

V_CE= 4V, I_C=3A

1.2

1.8

Collector-emitter saturation voltage

Base-emitter

voltage

V_CE=10V , I_C=500mA

MH_Z

Transition frequency

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