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TIP125TU

更新时间: 2024-11-23 13:14:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体开关晶体管局域网
页数 文件大小 规格书
4页 48K
描述
PNP Epitaxial Darlington Transistor, TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB, 1000/RAIL

TIP125TU 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.22
最大集电极电流 (IC):5 A集电极-发射极最大电压:60 V
配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE):1000
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):65 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

TIP125TU 数据手册

 浏览型号TIP125TU的Datasheet PDF文件第2页浏览型号TIP125TU的Datasheet PDF文件第3页浏览型号TIP125TU的Datasheet PDF文件第4页 
TIP125/126/127  
Medium Power Linear Switching Applications  
Complementary to TIP120/121/122  
TO-220  
1
1.Base 2.Collector 3.Emitter  
PNP Epitaxial Darlington Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Equivalent Circuit  
C
Symbol  
Parameter  
Value  
Units  
V
Collector-Base Voltage : TIP125  
- 60  
- 80  
- 100  
V
V
V
CBO  
: TIP126  
: TIP127  
B
Collector-Emitter Voltage : TIP125  
- 60  
- 80  
- 100  
V
V
V
V
V
: TIP126  
: TIP127  
CEO  
EBO  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current (DC)  
- 5  
- 5  
V
A
R1  
R2  
I
I
I
C
E
R1 8 k  
R2 0.12 k Ω  
- 8  
A
CP  
B
- 120  
2
mA  
W
W
°C  
°C  
P
Collector Dissipation (T =25°C)  
a
C
Collector Dissipation (T =25°C)  
65  
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
V
(sus)  
Collector-Emitter Sustaining Voltage  
CEO  
: TIP125  
: TIP126  
: TIP127  
I
= -100mA, I = 0  
-60  
-80  
-120  
V
V
V
C
B
I
Collector Cut-off Current  
: TIP125  
CEO  
V
V
V
= -30V, I = 0  
-2  
-2  
-2  
mA  
mA  
mA  
CE  
CE  
CE  
B
: TIP126  
: TIP127  
= -40V, I = 0  
B
= -50V, I = 0  
B
I
Collector Cut-off Current  
: TIP125  
CBO  
V
V
V
= -60V, I = 0  
-1  
-1  
-1  
mA  
mA  
mA  
CB  
CB  
CB  
E
: TIP126  
: TIP127  
= -80V, I = 0  
E
= -100V, I = 0  
E
I
Emitter Cut-off Current  
* DC Current Gain  
V
= -5V, I = 0  
-2  
mA  
EBO  
BE  
C
h
V
V
= -3V, I = 0.5A  
1000  
1000  
FE  
CE  
BE  
CE  
CE  
C
= -3V, I = -3A  
C
V
(sat)  
(on)  
* Collector-Emitter Saturation Voltage  
I
= -3A, I = -12mA  
-2  
-4  
V
V
C
B
I =-5A, I =-20mA  
C
B
V
* Base-Emitter ON Voltage  
Output Capacitance  
V
= -3V, I = -3A  
-2.5  
300  
V
CE  
CB  
C
C
V
= -10V, I = 0, f = 0.1MHz  
pF  
ob  
E
* Pulse Test : PW300µs, Duty cycle 2%  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  

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