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TIP126_08 PDF预览

TIP126_08

更新时间: 2024-11-19 12:23:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管达林顿晶体管
页数 文件大小 规格书
5页 540K
描述
PNP Epitaxial Darlington Transistor

TIP126_08 数据手册

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October 2008  
TIP125/TIP126/TIP127  
PNP Epitaxial Darlington Transistor  
Medium Power Linear Switching Applications  
Complementary to TIP120/121/122  
Equivalent Circuit  
C
B
TO-220  
1
R1  
R2  
1.Base 2.Collector 3.Emitter  
E
R1 @ 8kW  
R2 @ 0.12kW  
Absolute Maximum Ratings*  
T
= 25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
Units  
VCBO  
Collector-Base Voltage : TIP125  
- 60  
- 80  
- 100  
V
V
V
: TIP126  
: TIP127  
Collector-Emitter Voltage : TIP125  
- 60  
- 80  
- 100  
V
V
V
VCEO  
: TIP126  
: TIP127  
VEBO  
IC  
ICP  
IB  
Emitter-Base Voltage  
- 5  
- 5  
V
A
Collector Current (DC)  
Collector Current (Pulse)  
Base Current (DC)  
- 8  
A
- 120  
2
mA  
W
W
°C  
°C  
PC  
Collector Dissipation (Ta=25°C)  
Collector Dissipation (TC=25°C)  
Junction Temperature  
65  
TJ  
150  
TSTG  
Storage Temperature  
- 65 ~ 150  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
© 2007 Fairchild Semiconductor Corporation  
TIP125/TIP126/TIP127 Rev. 1.0.0  
www.fairchildsemi.com  
1

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