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TIP125A PDF预览

TIP125A

更新时间: 2024-10-31 22:42:15
品牌 Logo 应用领域
德欧泰克 - DIOTEC 晶体晶体管开关局域网
页数 文件大小 规格书
2页 50K
描述
Si-Epitaxial PlanarTransistors

TIP125A 数据手册

 浏览型号TIP125A的Datasheet PDF文件第2页 
TIP125, TIP126, TIP127  
PNP  
Darlington Transistors  
PNP  
Si-Epitaxial PlanarTransistors  
Si-Epitaxial PlanarTransistoren  
Version 2004-07-01  
Collector current – Kollektorstrom  
5 A  
Plastic case  
TO-220AB  
Kunststoffgehäuse  
Weight approx. – Gewicht ca.  
2.2 g  
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
Standard packaging taped and reeled  
Standard Lieferform gegurtet auf Rolle  
1 = B1 2 = C2 3 = E2  
Maximum ratings (TA = 25°C)  
Grenzwerte (TA = 25°C)  
TIP125  
60 V  
TIP126  
80 V  
TIP127  
100 V  
100 V  
Collector-Emitter-voltage  
Collector-Base-voltage  
Emitter-Base-voltage  
B open  
E open  
C open  
- VCE0  
- VCB0  
- VEB0  
60 V  
80 V  
50 V  
Power dissipation – Verlustleistung  
without cooling – ohne Kühlung  
with cooling – mit Kühlung  
Ptot  
2 W 1)  
65 W  
TC = 25°C Ptot  
- IC  
Peak Collector current – Kollektor-Spitzenstrom - ICM  
Collector current – Kollektorstrom (dc)  
5 A  
8 A  
Base current – Basisstrom (dc)  
- IB  
Tj  
120 mA  
Junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
- 65…+ 150°C  
- 65…+ 150°C  
TS  
Characteristics (Tj = 25°C)  
Kennwerte (Tj = 25°C)  
Min.  
Typ.  
Max.  
Collector-Emitter cutoff current – Kollektorreststrom  
IB = 0, - VCE = 30 V  
IB = 0, - VCE = 40 V  
IB = 0, - VCE = 50 V  
TIP125  
TIP126  
TIP127  
- ICE0  
- ICE0  
- ICE0  
500 nA  
500 nA  
500 nA  
Collector-Base cutoff current – Kollektorreststrom  
IE = 0, - VCB = 60 V  
IE = 0, - VCB = 80 V  
IE = 0, - VCB = 100 V  
TIP125  
TIP126  
TIP127  
- ICB0  
- ICB0  
- ICB0  
200 nA  
200 nA  
200 nA  
1
)
Valid, if leads are kept at ambient temperature at a distance of 5 mm from case  
Gültig, wenn die Anschlußdrähte in 5 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden  
1

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