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TIP125BV PDF预览

TIP125BV

更新时间: 2024-11-02 10:14:51
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
61页 426K
描述
5A, 60V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

TIP125BV 数据手册

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SEMICONDUCTOR TECHNICAL DATA  
. . . designed for general–purpose amplifier and low–speed switching applications.  
High DC Current Gain —  
= 2500 (Typ) @ I = 4.0 Adc  
Collector–Emitter Sustaining Voltage — @ 100 mAdc  
h
FE  
C
V
V
V
= 60 Vdc (Min) — TIP120, TIP125  
= 80 Vdc (Min) — TIP121, TIP126  
= 100 Vdc (Min) — TIP122, TIP127  
CEO(sus)  
CEO(sus)  
CEO(sus)  
Low Collector–Emitter Saturation Voltage —  
V
V
= 2.0 Vdc (Max) @ I = 3.0 Adc  
CE(sat)  
CE(sat)  
C
= 4.0 Vdc (Max) @ I = 5.0 Adc  
C
Monolithic Construction with Built–In Base–Emitter Shunt Resistors  
TO–220AB Compact Package  
*Motorola Preferred Device  
*MAXIMUM RATINGS  
TIP120,  
TIP125  
TIP121,  
TIP126  
TIP122,  
TIP127  
DARLINGTON  
5 AMPERE  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
6080100 VOLTS  
65 WATTS  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
60  
60  
80  
80  
100  
100  
V
CB  
EB  
V
5.0  
Collector Current — Continuous  
Peak  
I
C
5.0  
8.0  
Base Current  
I
B
120  
mAdc  
Total Power Dissipation @ T = 25 C  
C
Derate above 25 C  
P
D
65  
0.52  
Watts  
W/ C  
Total Power Dissipation @ T = 25 C  
A
Derate above 25 C  
P
D
2.0  
0.016  
Watts  
W/ C  
Unclamped Inductive Load Energy (1)  
E
50  
mJ  
C
Operating and Storage Junction,  
Temperature Range  
T , T  
65 to +150  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
C/W  
C/W  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
R
1.92  
62.5  
CASE 221A–06  
TO–220AB  
θJC  
R
θJA  
= 20 V, R = 100 .  
BE  
(1) I = 1 A, L = 100 mH, P.R.F. = 10 Hz, V  
C
CC  
T
A
T
C
4.0 80  
3.0 60  
2.0 40  
1.0 20  
T
C
T
A
0
0
0
20  
40  
60  
80  
100  
120  
140  
160  
T, TEMPERATURE (°C)  
Figure 1. Power Derating  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 2  
3–900  
Motorola Bipolar Power Transistor Device Data  

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