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TIP125J69Z PDF预览

TIP125J69Z

更新时间: 2024-11-24 07:47:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
4页 45K
描述
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

TIP125J69Z 数据手册

 浏览型号TIP125J69Z的Datasheet PDF文件第2页浏览型号TIP125J69Z的Datasheet PDF文件第3页浏览型号TIP125J69Z的Datasheet PDF文件第4页 
TIP125/126/127  
Medium Power Linear Switching Applications  
Complementary to TIP120/121/122  
TO-220  
1
1.Base 2.Collector 3.Emitter  
PNP Epitaxial Darlington Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Equivalent Circuit  
C
Symbol  
Parameter  
Value  
Units  
V
Collector-Base Voltage : TIP125  
- 60  
- 80  
- 100  
V
V
V
CBO  
: TIP126  
: TIP127  
B
Collector-Emitter Voltage : TIP125  
- 60  
- 80  
- 100  
V
V
V
V
V
: TIP126  
: TIP127  
CEO  
EBO  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current (DC)  
- 5  
- 5  
V
A
R1  
R2  
I
I
I
C
E
R1 8 k  
R2 0.12 k Ω  
- 8  
A
CP  
B
- 120  
2
mA  
W
W
°C  
°C  
P
Collector Dissipation (T =25°C)  
a
C
Collector Dissipation (T =25°C)  
65  
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
V
(sus)  
Collector-Emitter Sustaining Voltage  
CEO  
: TIP125  
: TIP126  
: TIP127  
I
= -100mA, I = 0  
-60  
-80  
-120  
V
V
V
C
B
I
Collector Cut-off Current  
: TIP125  
CEO  
V
V
V
= -30V, I = 0  
-2  
-2  
-2  
mA  
mA  
mA  
CE  
CE  
CE  
B
: TIP126  
: TIP127  
= -40V, I = 0  
B
= -50V, I = 0  
B
I
Collector Cut-off Current  
: TIP125  
CBO  
V
V
V
= -60V, I = 0  
-1  
-1  
-1  
mA  
mA  
mA  
CB  
CB  
CB  
E
: TIP126  
: TIP127  
= -80V, I = 0  
E
= -100V, I = 0  
E
I
Emitter Cut-off Current  
* DC Current Gain  
V
= -5V, I = 0  
-2  
mA  
EBO  
BE  
C
h
V
V
= -3V, I = 0.5A  
1000  
1000  
FE  
CE  
BE  
CE  
CE  
C
= -3V, I = -3A  
C
V
(sat)  
(on)  
* Collector-Emitter Saturation Voltage  
I
= -3A, I = -12mA  
-2  
-4  
V
V
C
B
I =-5A, I =-20mA  
C
B
V
* Base-Emitter ON Voltage  
Output Capacitance  
V
= -3V, I = -3A  
-2.5  
300  
V
CE  
CB  
C
C
V
= -10V, I = 0, f = 0.1MHz  
pF  
ob  
E
* Pulse Test : PW300µs, Duty cycle 2%  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  

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