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TIP125G PDF预览

TIP125G

更新时间: 2024-11-01 04:28:27
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管放大器PC局域网
页数 文件大小 规格书
7页 91K
描述
Plastic Medium-Power Complementary Silicon Transistors

TIP125G 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:TO-220AB包装说明:LEAD FREE, PLASTIC, CASE 221A-09, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:2 weeks风险等级:1.21
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:227250Samacsys Pin Count:3
Samacsys Part Category:TransistorSamacsys Package Category:Transistor Outline, Vertical
Samacsys Footprint Name:TO-220 CASE221A-09Samacsys Released Date:2015-11-03 12:30:39
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):5 A集电极-发射极最大电压:60 V
配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE):1000
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):65 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

TIP125G 数据手册

 浏览型号TIP125G的Datasheet PDF文件第2页浏览型号TIP125G的Datasheet PDF文件第3页浏览型号TIP125G的Datasheet PDF文件第4页浏览型号TIP125G的Datasheet PDF文件第5页浏览型号TIP125G的Datasheet PDF文件第6页浏览型号TIP125G的Datasheet PDF文件第7页 
TIP120, TIP121, TIP122  
(NPN); TIP125, TIP126,  
TIP127 (PNP)  
Preferred Devices  
Plastic Medium−Power  
Complementary Silicon  
Transistors  
http://onsemi.com  
Designed for general−purpose amplifier and low−speed switching  
applications.  
DARLINGTON  
5 AMPERE  
Features  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
60−80−100 VOLTS, 65 WATTS  
High DC Current Gain −  
h
= 2500 (Typ) @ I  
= 4.0 Adc  
FE  
C
Collector−Emitter Sustaining Voltage − @ 100 mAdc  
V
= 60 Vdc (Min) − TIP120, TIP125  
= 80 Vdc (Min) − TIP121, TIP126  
= 100 Vdc (Min) − TIP122, TIP127  
MARKING  
DIAGRAM  
CEO(sus)  
4
Low Collector−Emitter Saturation Voltage −  
V
CE(sat)  
= 2.0 Vdc (Max) @ I = 3.0 Adc  
C
= 4.0 Vdc (Max) @ I = 5.0 Adc  
C
TO−220AB  
TIP12xG  
AYWW  
Monolithic Construction with Built−In Base−Emitter Shunt Resistors  
Pb−Free Packages are Available*  
CASE 221A  
STYLE 1  
1
2
3
TIP12x = Device Code  
x
A
Y
= 0, 1, 2, 5, 6, or 7  
= Assembly Location  
= Year  
WW  
G
= Work Week  
= Pb−Free Package  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
September, 2005 − Rev. 6  
TIP120/D  

TIP125G 替代型号

型号 品牌 替代类型 描述 数据表
TIP125 ONSEMI

完全替代

Plastic Medium-Power Complementary Silicon Transistors
TIP32CG ONSEMI

类似代替

Complementary Silicon Plastic Power Transistors
TIP41CG ONSEMI

类似代替

Complementary Silicon Plastic Power Transistors

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