Datasheet > TICP107D

TICP107D

更新时间： 2024-11-13 20:31:51

品牌	Logo	应用领域
伯恩斯 - BOURNS		/
页数	文件大小	规格书
2页	85K
描述
Silicon Controlled Rectifier

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中文翻译

获取价格

技术参数
数据手册

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TICP107D 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Is Samacsys：	N	Base Number Matches：	1

TICP107D 数据手册

TICP107 SERIES

SILICON CONTROLLED RECTIFIERS

LP PACKAGE

(TOP VIEW)

●

1 A Continuous On-State Current

15 A Surge-Current

Glass Passivated Wafer

400 V to 600 V Off-State Voltage

MDC1AA

50 µA min, 200 µA max

LP PACKAGE

WITH FORMED LEADS

(TOP VIEW)

di/dt 100A/µs

Package Options

PACKAGE

PACKING

Bulk

PART # SUFFIX

(None)

LP with fomed leads

Tape and Reel

MDC1AB

absolute maximum ratings over operating junction temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

TICP107D

TICP107M

TICP107D

TICP107M

400

Repetitive peak off-state voltage (see Note 1)

V_DRM

600

400

Repetitive peak reverse voltage

V_RRM

600

Continuous on-state current at (or below) 25°C ambient temperature (see Note 2)

Surge on-state current at (or below) 25°C ambient temperature (see Note 3)

Critical rate of rise of on-state current at 110°C (see Note 4)

Peak positive gate current (pulse width ≤ 300 µs)

Junction temperature range

I_T(RMS)

I_TSM

di/dt

I_GM

100

A/µs

0.2

T_J

-40 to +110

-40 to +125

230

°C

Storage temperature range

T_stg

T_L

Lead temperature 3.2 mm from case for 10 seconds

NOTES: 1. These values apply when the gate-cathode resistance R_GK= 1 kΩ.

2. These values apply for continuous dc operation with resistive load.

3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge

and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.

4. Rate of rise of on-state current after triggering with I_G= 10mA, di_G/dt = 1A/µs.

JANUARY 1999 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

中文翻译

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