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TICP206MLPR PDF预览

TICP206MLPR

更新时间： 2024-11-14 09:41:31
品牌 Logo 应用领域
伯恩斯 - BOURNS 三端双向交流开关触发装置
页数 文件大小 规格书
3页 103K
描述
4 Quadrant Logic Level TRIAC, 600V V(DRM), 1.5A I(T)RMS, PLASTIC, TO-92, 3 PIN

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中文翻译

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TICP206MLPR 技术参数

生命周期：Obsolete零件包装代码：TO-92
包装说明：CYLINDRICAL, O-PBCY-T3针数：3
Reach Compliance Code：unknownHTS代码：8541.30.00.80
风险等级：5.71配置：SINGLE
JESD-30 代码：O-PBCY-T3元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：CYLINDRICAL
认证状态：Not Qualified最大均方根通态电流：1.5 A
断态重复峰值电压：600 V表面贴装：NO
端子形式：THROUGH-HOLE端子位置：BOTTOM
触发设备类型：4 QUADRANT LOGIC LEVEL TRIACBase Number Matches：1

TICP206MLPR 数据手册

 浏览型号TICP206MLPR的Datasheet PDF文件第2页浏览型号TICP206MLPR的Datasheet PDF文件第3页 
TICP206 SERIES  
SILICON TRIACS  
●
●
●
●
●
1.5 A RMS  
LP PACKAGE  
(TOP VIEW)  
Glass Passivated Wafer  
400 V to 600 V Off-State Voltage  
G
MT2  
MT1  
1
2
3
Max I of 10 mA  
GT  
Package Options  
MDC2AA  
LP PACKAGE  
WITH FORMED LEADS  
(TOP VIEW)  
PACKAGE  
LP  
PACKING  
Bulk  
PART # SUFFIX  
(None)  
R
LP with fomed leads  
Tape and Reel  
G
1
2
3
MT2  
MT1  
MDC2AB  
absolute maximum ratings over operating case temperature (unless otherwise noted)  
RATING  
Repetitive peak off-state voltage (see Note 1)  
Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2)  
SYMBOL  
VALUE  
UNIT  
TICP206D  
TICP206M  
400  
VDRM  
V
600  
IT(RMS)  
ITSM  
ITSM  
IGM  
1.5  
10  
A
A
Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3)  
Peak on-state surge current half-sine-wave at (or below) 25°C case temperature (see Note 4)  
Peak gate current  
12  
A
0.2  
A
Average gate power dissipation at (or below) 85°C case temperature (see Note 5)  
Operating case temperature range  
PG(AV)  
TC  
0.3  
W
°C  
°C  
°C  
-40 to +110  
-40 to +125  
230  
Storage temperature range  
Tstg  
Lead temperature 1.6 mm from case for 10 seconds  
TL  
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.  
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at  
the rate of 60 mA/°C.  
3. This value applies for one 50-Hz full-sine-wave when thedevice is operating at (or below) the rated value of on-state current. Surge  
may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.  
4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current.  
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.  
5. This value applies for a maximum averaging time of 20 ms.  
electrical characteristics at 25°C case temperature (unless otherwise noted )  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
Repetitive peak off-  
state current  
IDRM  
VD = rated VDRM  
IG = 0  
20  
µA  
Vsupply = +12 V†  
Vsupply = +12 V†  
Vsupply = -12 V†  
Vsupply = -12 V†  
Vsupply = +12 V†  
RL = 10 Ω  
RL = 10 Ω  
RL = 10 Ω  
RL = 10 Ω  
RL = 10 Ω  
RL = 10 Ω  
RL = 10 Ω  
RL = 10 Ω  
tp(g) > 20 µs  
tp(g) > 20 µs  
tp(g) > 20 µs  
tp(g) > 20 µs  
tp(g) > 20 µs  
tp(g) > 20 µs  
tp(g) > 20 µs  
tp(g) > 20 µs  
8
Gate trigger  
current  
-8  
IGT  
mA  
V
-8  
10  
2.5  
-2.5  
-2.5  
2.5  
Gate trigger  
voltage  
Vsupply = +12 V†  
VGT  
Vsupply = -12 V†  
Vsupply = -12 V†  
† All voltages are with respect to Main Terminal 1.  
MARCH 1988 - REVISED SEPTEMBER 2002  
Specifications are subject to change without notice.  
1
123

中文翻译

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