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TICP206D

更新时间： 2024-09-24 22:42:15
品牌 Logo 应用领域
POINN 可控硅三端双向交流开关
页数 文件大小 规格书
7页 130K
描述
SILICON TRIACS

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中文翻译

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TICP206D 技术参数

生命周期：Transferred包装说明：CYLINDRICAL, O-PBCY-T3
Reach Compliance Code：unknownHTS代码：8541.30.00.80
风险等级：5.71Is Samacsys：N
配置：SINGLE最大直流栅极触发电流：8 mA
最大直流栅极触发电压：2.5 V最大维持电流：30 mA
JEDEC-95代码：TO-92JESD-30 代码：O-PBCY-T3
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：CYLINDRICAL认证状态：Not Qualified
最大均方根通态电流：1.5 A重复峰值关态漏电流最大值：20 µA
断态重复峰值电压：400 V表面贴装：NO
端子形式：THROUGH-HOLE端子位置：BOTTOM
触发设备类型：4 QUADRANT LOGIC LEVEL TRIACBase Number Matches：1

TICP206D 数据手册

 浏览型号TICP206D的Datasheet PDF文件第2页浏览型号TICP206D的Datasheet PDF文件第3页浏览型号TICP206D的Datasheet PDF文件第4页浏览型号TICP206D的Datasheet PDF文件第5页浏览型号TICP206D的Datasheet PDF文件第6页浏览型号TICP206D的Datasheet PDF文件第7页 
TICP206 SERIES  
SILICON TRIACS  
Copyright © 1997, Power Innovations Limited, UK  
MARCH 1988 - REVISED MARCH 1997  
●
●
●
●
●
1.5 A RMS  
LP PACKAGE  
(TOP VIEW)  
Glass Passivated Wafer  
400 V to 600 V Off-State Voltage  
G
MT2  
MT1  
1
2
3
Max I of 10 mA  
GT  
Package Options  
MDC2AA  
LP PACKAGE  
WITH FORMED LEADS  
(TOP VIEW)  
PACKAGE  
LP  
PACKING  
Bulk  
PART # SUFFIX  
(None)  
R
LP with fomed leads  
Tape and Reel  
G
1
2
3
MT2  
MT1  
MDC2AB  
absolute maximum ratings over operating case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
400  
UNIT  
TICP206D  
TICP206M  
Repetitive peak off-state voltage (see Note 1)  
VDRM  
V
600  
Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2)  
Peak on-state surge current full-sine-wave (see Note 3)  
Peak on-state surge current half-sine-wave (see Note 4)  
Peak gate current  
IT(RMS)  
ITSM  
ITSM  
IGM  
1.5  
A
A
10  
12  
A
±0.2  
A
Average gate power dissipation at (or below) 85°C case temperature (see Note 5)  
Operating case temperature range  
PG(AV)  
TC  
0.3  
W
°C  
°C  
°C  
-40 to +110  
-40 to +125  
230  
Storage temperature range  
Tstg  
Lead temperature 1.6 mm from case for 10 seconds  
TL  
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.  
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at  
the rate of 60 mA/°C.  
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current.  
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.  
4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current.  
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.  
5. This value applies for a maximum averaging time of 20 ms.  
electrical characteristics at 25°C case temperature (unless otherwise noted)  
MIN  
TYP  
MAX  
PARAMETER  
TEST CONDITIONS  
IG = 0  
UNIT  
Repetitive peak off-  
state current  
IDRM  
VD = rated VDRM  
supply = +12 V†  
±20  
mA  
V
RL = 10 W  
RL = 10 W  
RL = 10 W  
RL = 10 W  
RL = 10 W  
RL = 10 W  
RL = 10 W  
RL = 10 W  
tp(g) > 20 ms  
tp(g) > 20 ms  
tp(g) > 20 ms  
tp(g) > 20 ms  
tp(g) > 20 ms  
tp(g) > 20 ms  
tp(g) > 20 ms  
tp(g) > 20 ms  
8
Peak gate trigger  
current  
Vsupply = +12 V†  
Vsupply = -12 V†  
Vsupply = -12 V†  
-8  
IGTM  
mA  
V
-8  
10  
V
supply = +12 V†  
2.5  
-2.5  
-2.5  
2.5  
Peak gate trigger  
voltage  
Vsupply = +12 V†  
Vsupply = -12 V†  
Vsupply = -12 V†  
VGTM  
† All voltages are with respect to Main Terminal 1.  
P R O D U C T  
I N F O R M A T I O N  
Information is current as of publication date. Products conform to specifications in accordance  
with the terms of Power Innovations standard warranty. Production processing does not  
necessarily include testing of all parameters.  
1
1234567

中文翻译

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