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TIC216D-S PDF预览

TIC216D-S

更新时间： 2024-11-04 15:54:19
品牌 Logo 应用领域
伯恩斯 - BOURNS 局域网三端双向交流开关
页数 文件大小 规格书
2页 77K
描述
4 Quadrant Logic Level TRIAC, 400V V(DRM), 6A I(T)RMS, TO-220AB, TO-220, 3 PIN

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TIC216D-S 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Obsolete零件包装代码：TO-220AB
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：compliantHTS代码：8541.30.00.80
风险等级：5.68Is Samacsys：N
其他特性：SENSITIVE GATE外壳连接：MAIN TERMINAL 2
配置：SINGLEJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED最大均方根通态电流：6 A
断态重复峰值电压：400 V表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED触发设备类型：4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches：1

TIC216D-S 数据手册

 浏览型号TIC216D-S的Datasheet PDF文件第2页 
TIC216 SERIES  
SILICON TRIACS  
TO-220 PACKAGE  
●
●
●
●
●
Sensitive Gate Triacs  
6 A RMS  
(TOP VIEW)  
MT1  
MT2  
G
1
2
3
Glass Passivated Wafer  
400 V to 800 V Off-State Voltage  
Max I of 5 mA (Quadrants 1 - 3)  
GT  
Pin 2 is in electrical contact with the mounting base.  
MDC2ACA  
absolute maximum ratings over operating case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
TIC216D  
TIC216M  
TIC21
TIC216
400  
600  
Repetitive peak off-state voltage (see Note 1)  
VDRM  
V
700  
800  
Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note
IT(RMS)  
ITSM  
IGM  
6
A
A
Peak on-state surge current full-sine-waveat (or below) 25°C case temature (sNote 3)  
Peak gate current  
60  
1
2.2  
A
Peak gate power dissipation at (or below) 85°C case temperure e w≤ 200 µs)  
Average gate power dissipation at (or below) 85°C ase temturee Note 4)  
Operating case temperature range  
PGM  
PG(AV)  
TC  
W
W
°C  
°C  
°C  
0.9  
-40 to +110  
-40 to +125  
230  
Storage temperature range  
Tstg  
Lead temperature 1.6 mm from case for secs  
TL  
NOTES: 1. These values appbidironaor any value of resistance between the gate and Main Terminal 1.  
2. This value applies 50-ull-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at  
the rate of 150 mA/°
3. This value applies for one 50-Hz full-sine-wave when thedevice is operating at (or below) the rated value of on-state current. Surge  
may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.  
4. This value applies for a maximum averaging time of 20 ms.  
electrical characteristics at 25°C case temperature (unless otherwise noted )  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
Repetitive peak  
off-state current  
IDRM  
VD = rated VDRM  
IG = 0  
TC = 110°C  
2
mA  
Vsupply = +12 V†  
RL = 10 Ω  
RL = 10 Ω  
RL = 10 Ω  
RL = 10 Ω  
tp(g) > 20 µs  
5
Gate trigger  
current  
Vsupply = +12 V†  
Vsupply = -12 V†  
Vsupply = -12 V†  
tp(g) > 20 µs  
tp(g) > 20 µs  
tp(g) > 20 µs  
-5  
-5  
10  
IGT  
mA  
† All voltages are with respect to Main Terminal 1.  
DECEMBER 1971 - REVISED SEPTEMBER 2002  
Specifications are subject to change without notice.  
1
12

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TIC216D-S 替代型号

型号 品牌 替代类型 描述 数据表
T2500DG ONSEMI

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