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TIC216M-S PDF预览

TIC216M-S

更新时间: 2024-11-04 15:54:19
品牌 Logo 应用领域
伯恩斯 - BOURNS 局域网三端双向交流开关
页数 文件大小 规格书
2页 77K
描述
4 Quadrant Logic Level TRIAC, 600V V(DRM), 6A I(T)RMS, TO-220AB, TO-220, 3 PIN

TIC216M-S 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantHTS代码:8541.30.00.80
风险等级:5.67其他特性:SENSITIVE GATE
外壳连接:MAIN TERMINAL 2配置:SINGLE
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
最大均方根通态电流:6 A断态重复峰值电压:600 V
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:4 QUADRANT LOGIC LEVEL TRIACBase Number Matches:1

TIC216M-S 数据手册

 浏览型号TIC216M-S的Datasheet PDF文件第2页 
TIC216 SERIES  
SILICON TRIACS  
TO-220 PACKAGE  
Sensitive Gate Triacs  
6 A RMS  
(TOP VIEW)  
MT1  
MT2  
G
1
2
3
Glass Passivated Wafer  
400 V to 800 V Off-State Voltage  
Max I of 5 mA (Quadrants 1 - 3)  
GT  
Pin 2 is in electrical contact with the mounting base.  
MDC2ACA  
absolute maximum ratings over operating case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
TIC216D  
TIC216M  
TIC21
TIC216
400  
600  
Repetitive peak off-state voltage (see Note 1)  
VDRM  
V
700  
800  
Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note
IT(RMS)  
ITSM  
IGM  
6
A
A
Peak on-state surge current full-sine-waveat (or below) 25°C case temature (sNote 3)  
Peak gate current  
60  
1
2.2  
A
Peak gate power dissipation at (or below) 85°C case temperure e w200 µs)  
Average gate power dissipation at (or below) 85°C ase temturee Note 4)  
Operating case temperature range  
PGM  
PG(AV)  
TC  
W
W
°C  
°C  
°C  
0.9  
-40 to +110  
-40 to +125  
230  
Storage temperature range  
Tstg  
Lead temperature 1.6 mm from case for secs  
TL  
NOTES: 1. These values appbidironaor any value of resistance between the gate and Main Terminal 1.  
2. This value applies 50-ull-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at  
the rate of 150 mA/°
3. This value applies for one 50-Hz full-sine-wave when thedevice is operating at (or below) the rated value of on-state current. Surge  
may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.  
4. This value applies for a maximum averaging time of 20 ms.  
electrical characteristics at 25°C case temperature (unless otherwise noted )  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
Repetitive peak  
off-state current  
IDRM  
VD = rated VDRM  
IG = 0  
TC = 110°C  
2
mA  
Vsupply = +12 V†  
RL = 10 Ω  
RL = 10 Ω  
RL = 10 Ω  
RL = 10 Ω  
tp(g) > 20 µs  
5
Gate trigger  
current  
Vsupply = +12 V†  
Vsupply = -12 V†  
Vsupply = -12 V†  
tp(g) > 20 µs  
tp(g) > 20 µs  
tp(g) > 20 µs  
-5  
-5  
10  
IGT  
mA  
† All voltages are with respect to Main Terminal 1.  
DECEMBER 1971 - REVISED SEPTEMBER 2002  
Specifications are subject to change without notice.  
1

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