TIC225

更新时间： 2024-11-04 12:36:03

品牌	Logo	应用领域
伯恩斯 - BOURNS		可控硅栅
页数	文件大小	规格书
4页	182K
描述
Sensitive Gate Triacs

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TIC225 数据手册

TIC225 SERIES

SILICON TRIACS

TO-220 PACKAGE

Sensitive Gate Triacs

(TOP VIEW)

8 A RMS, 70 A Peak

MT1

MT2

Glass Passivated Wafer

400 V to 800 V Off-State Voltage

Max I of 5 mA (Quadrant 1)

Pin 2 is in electrical contact with the mounting base.

MDC2ACA

This series is currently available,

but not recommended for new

designs.

absolute maximum ratings over operating case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

TIC225D

TIC225M

TIC225S

TIC225N

400

600

Repetitive peak off-state voltage (see Note 1)

V_DRM

700

800

Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note 2)

I_T(RMS)

I_TSM

I_GM

Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3)

Peak gate current

±1

Peak gate power dissipation at (or below) 85°C case temperature (pulse width ≤ 200 μs)

Average gate power dissipation at (or below) 85°C case temperature (see Note 4)

Operating case temperature range

P_GM

P_G(AV)

T_C

2.2

°C

0.9

-40 to +110

-40 to +125

230

Storage temperature range

T_stg

Lead temperature 1.6 mm from case for 10 seconds

T_L

NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.

2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at

the rate of 200 mA/°C.

3. This value applies for one 50-Hz full-sine-wave when thedevice is operating at (or below) the rated value of on-state current. Surge

may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.

4. This value applies for a maximum averaging time of 20 ms.

electrical characteristics at 25°C case temperature (unless otherwise noted )

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Repetitive peak

off-state current

I_DRM

_D= rated V_DRM

I_G= 0

T_C= 110°C

±2

V_supply= +12 V†

R_L= 10 Ω

t_p(g)> 20 μs

2.3

-3.8

-3

Gate trigger

current

V_supply= +12 V†

V_supply= -12 V†

t_p(g)> 20 μs

-20

-10

I_GT

† All voltages are with respect to Main Terminal 1.

JULY 1975 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

12 3 4

中文翻译

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与TIC225相关器件

型号	品牌	获取价格	描述	数据表
TIC225A	COMSET	获取价格	SILICON BIDIRECTIONAL TRIODE THYRISTOR
TIC225A	TI	获取价格	TRIAC, TRIAC,100V V(DRM),8A I(T)RMS,TO-220
TIC225A_12	COMSET	获取价格	SILICON BIDIRECTIONAL TRIODE THYRISTOR
TIC225B	COMSET	获取价格	SILICON BIDIRECTIONAL TRIODE THYRISTOR
TIC225B	TI	获取价格	TRIAC, TRIAC,200V V(DRM),8A I(T)RMS,TO-220
TIC225C	TI	获取价格	TRIAC, TRIAC,300V V(DRM),8A I(T)RMS,TO-220
TIC225C	COMSET	获取价格	SILICON BIDIRECTIONAL TRIODE THYRISTOR
TIC225D	COMSET	获取价格	SILICON BIDIRECTIONAL TRIODE THYRISTOR
TIC225D	POINN	获取价格	SILICON TRIACS
TIC225D	TI	获取价格	TRIAC, TRIAC,400V V(DRM),8A I(T)RMS,TO-220