Datasheet > TIC206D-S

TIC206D-S

更新时间： 2024-09-10 15:54:19

品牌	Logo	应用领域
伯恩斯 - BOURNS		/
页数	文件大小	规格书
3页	103K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

TIC206D-S 数据手册

TIC206 SERIES

SILICON TRIACS

TO-220 PACKAGE

●

Sensitive Gate Triacs

4 A RMS

(TOP VIEW)

MT1

MT2

Glass Passivated Wafer

400 V to 700 V Off-State Voltage

Max I of 5 mA (Quadrants 1 - 3)

Pin 2 is in electrical contact with the mounting base.

MDC2ACA

absolute maximum ratings over operating case temperature (unless otherwise noted)

RATING

Repetitive peak off-state voltage (see Note 1)

Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2)

SYMBOL

VALUE

UNIT

TIC206D

TIC206M

TIC206S

400

V_DRM

600

700

I_T(RMS)

I_TSM

I_GM

Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3)

Peak gate current

0.2

Peak gate power dissipation at (or below) 85°C case temperature (pulse width ≤ 200 µs)

Average gate power dissipation at (or below) 85°C case temperature (see Note 4)

Operating case temperature range

P_GM

P_G(AV)

T_C

1.3

°C

0.3

-40 to +110

-40 to +125

230

Storage temperature range

T_stg

Lead temperature 1.6 mm from case for 10 seconds

T_L

NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.

2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at

the rate of 160 mA/°C.

3. This value applies for one 50-Hz full-sine-wave when thedevice is operating at (or below) the rated value of on-state current. Surge

may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.

4. This value applies for a maximum averaging time of 20 ms.

electrical characteristics at 25°C case temperature (unless otherwise noted )

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Repetitive peak

off-state current

I_DRM

V_D= rated V_DRM

I_G= 0

T_C= 110°C

V_supply= +12 V†

R_L= 10 Ω

t_p(g)> 20 µs

0.9

-2.2

-1.8

2.4

Gate trigger

current

V_supply= +12 V†

V_supply= -12 V†

t_p(g)> 20 µs

-5

I_GT

† All voltages are with respect to Main Terminal 1.

DECEMBER 1971 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

12 3

中文翻译

下载PDF

与TIC206D-S相关器件

型号	品牌	获取价格	描述	数据表
TIC206M	POINN	获取价格	SILICON TRIACS
TIC206M	COMSET	获取价格	SILICON BIDIRECTIONAL TRIODE THYRISTOR
TIC206M	ASI	获取价格	TRIAC, 600V V(DRM), 3A I(T)RMS,
TIC206M	NJSEMI	获取价格	Thyristor TRIAC 600V 25A 3-Pin(3+Tab) TO-220
TIC206M-S	BOURNS	获取价格	4 Quadrant Logic Level TRIAC, 600V V(DRM), 4A I(T)RMS, TO-220AB, TO-220, 3 PIN
TIC206N	COMSET	获取价格	SILICON BIDIRECTIONAL TRIODE THYRISTOR
TIC206N	POINN	获取价格	SILICON TRIACS
TIC206N	ASI	获取价格	TRIAC, 700V V(DRM), 3A I(T)RMS,
TIC206S	ASI	获取价格	TRIAC, 800V V(DRM), 3A I(T)RMS,
TIC206S	POINN	获取价格	SILICON TRIACS