Datasheet > TIC206D-S

TIC206D-S

更新时间： 2024-11-04 15:54:19

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数据手册

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TIC206D-S 数据手册

TIC206 SERIES

SILICON TRIACS

TO-220 PACKAGE

●

Sensitive Gate Triacs

4 A RMS

(TOP VIEW)

MT1

MT2

Glass Passivated Wafer

400 V to 700 V Off-State Voltage

Max I of 5 mA (Quadrants 1 - 3)

Pin 2 is in electrical contact with the mounting base.

MDC2ACA

absolute maximum ratings over operating case temperature (unless otherwise noted)

RATING

Repetitive peak off-state voltage (see Note 1)

Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2)

SYMBOL

VALUE

UNIT

TIC206D

TIC206M

TIC206S

400

V_DRM

600

700

I_T(RMS)

I_TSM

I_GM

Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3)

Peak gate current

0.2

Peak gate power dissipation at (or below) 85°C case temperature (pulse width ≤ 200 µs)

Average gate power dissipation at (or below) 85°C case temperature (see Note 4)

Operating case temperature range

P_GM

P_G(AV)

T_C

1.3

°C

0.3

-40 to +110

-40 to +125

230

Storage temperature range

T_stg

Lead temperature 1.6 mm from case for 10 seconds

T_L

NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.

2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at

the rate of 160 mA/°C.

3. This value applies for one 50-Hz full-sine-wave when thedevice is operating at (or below) the rated value of on-state current. Surge

may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.

4. This value applies for a maximum averaging time of 20 ms.

electrical characteristics at 25°C case temperature (unless otherwise noted )

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Repetitive peak

off-state current

I_DRM

V_D= rated V_DRM

I_G= 0

T_C= 110°C

V_supply= +12 V†

R_L= 10 Ω

t_p(g)> 20 µs

0.9

-2.2

-1.8

2.4

Gate trigger

current

V_supply= +12 V†

V_supply= -12 V†

t_p(g)> 20 µs

-5

I_GT

† All voltages are with respect to Main Terminal 1.

DECEMBER 1971 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

12 3

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