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TGL41-39-E3/96 PDF预览

TGL41-39-E3/96

更新时间: 2024-09-09 15:54:19
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
5页 88K
描述
Trans Voltage Suppressor Diode, 31.6V V(RWM), Unidirectional,

TGL41-39-E3/96 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.83
击穿电压标称值:39 V最大钳位电压:56.4 V
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-609代码:e3
湿度敏感等级:1极性:UNIDIRECTIONAL
最大重复峰值反向电压:31.6 V子类别:Transient Suppressors
表面贴装:YES端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
Base Number Matches:1

TGL41-39-E3/96 数据手册

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TGL41-6.8A thru TGL41-200A  
www.vishay.com  
Vishay General Semiconductor  
TRANSZorb® Transient Voltage Suppressors  
FEATURES  
• Plastic MELF package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Available in uni-directional polarity only  
• 400 W peak pulse power capability with a  
10/1000 μs waveform, repetitive rate (duty  
cycle): 0.01 %  
• Excellent clamping capability  
• Very fast response time  
DO-213AB (GL41)  
• Low incremental surge resistance  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
250 °C  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, and telecommunication.  
PRIMARY CHARACTERISTICS  
VBR uni-directional  
6.45 V to 210 V  
VWM  
PPPM  
PD  
5.8 V to 171 V  
400 W, 200 W  
1.0 W  
MECHANICAL DATA  
IFSM  
40 A  
Case: DO-213AB (GL41)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS compliant, commercial grade  
TJ max.  
Polarity  
Package  
150 °C  
Uni-directional  
DO-213 AB (GL41)  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
Polarity: Blue band denotes the cathode which is positive  
with respect to the anode under normal TVS operation  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
PPPM  
PD  
VALUE  
UNIT  
W
Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 1)  
400  
1.0  
Power dissipation on infinite heatsink at TL = 75 °C  
W
Peak pulse current with a 10/1000 μs waveform (1) (fig. 3)  
Peak forward surge current, 8.3 ms half sine-wave uni-directional only (2)  
Maximum instantaneous forward voltage at 25 A for uni-directional only  
Operating junction and storage temperature range  
IPPM  
See next table  
40  
A
IFSM  
A
VF  
3.5  
V
TJ, TSTG  
- 55 to 150  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2. Rating is 200 W above 91 V  
Measured at 8.3 ms single half sine-wave or equivalent square wave duty cycle = 4 pulses per minute maximum  
(2)  
Revision: 11-Dec-12  
Document Number: 88403  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

TGL41-39-E3/96 替代型号

型号 品牌 替代类型 描述 数据表
TGL41-39A-E3/96 VISHAY

类似代替

TVS DIODE 33.3V 53.9V DO213AB

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