Datasheet > TGL41-39HE3

TGL41-39HE3

更新时间： 2024-09-10 09:34:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	92K
描述
Trans Voltage Suppressor Diode, 400W, Unidirectional, 1 Element, Silicon, DO-213AB, PLASTIC, GL41, 2 PIN

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TGL41-39HE3 数据手册

TGL41-6.8 thru TGL41-200A

Vishay General Semiconductor

Surface Mount TRANSZORB^®Transient Voltage Suppressors

FEATURES

• Plastic MELF package

• Ideal for automated placement

• Glass passivated chip junction

• Available in uni-directional polarity only

• 400 W peak pulse power capability with a

10/1000 µs waveform, repetitive rate (duty

cycle): 0.01 % (200 W above 91 V)

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

DO-213AB (GL41)

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 250 °C

• Solder dip 260 °C, 40 s

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching

and lighting on ICs, MOSFET, signal lines of

sensor units for consumer, computer, industrial and

telecommunication.

PRIMARY CHARACTERISTICS

V_BR

P_PPM

P_D

6.8 V to 200 V

400 W, 200 W

1.0 W

MECHANICAL DATA

Case: DO-213AB (GL41)

Molding compound meets UL 94 V-0 flammability

rating

I_FSM

40 A

T_Jmax.

150 °C

Base P/N-E3 - RoHS compliant, commercial grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix meets JESD 201 class 1A whisker test

Polarity: Blue band denotes the cathode which is

positive with respect to the anode under normal TVS

operation

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBO

P_PPM

P_D

VALUE

UNIT

Peak pulse power dissipation with a 10/1000 µs waveform ⁽¹⁾(Fig. 1)

400

Power dissipation on infinite heatsink at T_L= 75 °C

1.0

See next table

Peak pulse current with a 10/1000 µs waveform ⁽¹⁾(Fig. 3)

Peak forward surge current, 8.3 ms single half sine-wave uni-directional only ⁽²⁾

Maximum instantaneous forward voltage at 25 A for uni-directional only

Operating junction and storage temperature range

I_PPM

I_FSM

V_F

3.5

T_J, T_STG

- 55 to + 150

°C

Notes:

(1) Non-repetitive current pulse, per Fig. 3 and derated above T_A= 25 °C per Fig. 2. Rating is 200 W above 91 V

(2) Measured at 8.3 ms single half sine-wave or equivalent square wave duty cycle = 4 pulses per minute maximum

Document Number: 88403

Revision: 20-Oct-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4 5 6

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与TGL41-39HE3相关器件

型号	品牌	获取价格	描述	数据表
TGL41-39HE3/26	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 31.6V V(RWM), Unidirectional, 1 Element, Silicon, DO
TGL41-400	DIOTEC	获取价格	Surface mount unidirectional and bidirectional Transient Voltage Suppressor Diodes
TGL41-400	SEMIKRON	获取价格	Unidirectional and bidirectional Transient Voltage Suppressor diodes
TGL41-400A	SEMIKRON	获取价格	Unidirectional and bidirectional Transient Voltage Suppressor diodes
TGL41-400A	DIOTEC	获取价格	Surface mount unidirectional and bidirectional Transient Voltage Suppressor Diodes
TGL41-400AC	SEMIKRON	获取价格	Trans Voltage Suppressor Diode, 400W, 342V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
TGL41-400C	SEMIKRON	获取价格	Trans Voltage Suppressor Diode, 400W, 324V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
TGL41-400CA	DIOTEC	获取价格	Trans Voltage Suppressor Diode, 400W, 342V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
TGL41-400CA	SEMIKRON	获取价格	Trans Voltage Suppressor Diode, 400W, 342V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
TGL41-43	SEMIKRON	获取价格	Unidirectional and bidirectional Transient Voltage Suppressor diodes

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