Datasheet > TGI1314-25L

TGI1314-25L

更新时间： 2024-11-07 21:09:39

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
2页	66K
描述
TRANSISTOR RF SMALL SIGNAL, FET, FET RF Small Signal

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中文翻译

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技术参数
数据手册

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TGI1314-25L 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.29.00.95	风险等级：	5.74
Base Number Matches：	1

TGI1314-25L 数据手册

MICROWAVE POWER GaN HEMT

MICROWAVE SEMICONDUCTOR

TGI1314-25L

TECHNICAL DATA

FEATURES

HIGH POWER

BROAD BAND INTERNALLY MATCHED HEMT

Pout=44.0dBm at Pin=39.0dBm

HERMETICALLY SEALED PACKAGE

HIGH GAIN

LOW INTERMODULATION DISTORTION

GL=8.0dB at 13.75GHz to 14.5GHz

IM3(Min.)=−25dBc at Po=37.0dBm

Single Carrier Level

TYPICAL APPLICATION

Ku Band Satellite Communications (SATCOM)

RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )

CHARACTERISTICS

Output Power

SYMBOL

Pout

ΔG

CONDITIONS

UNIT MIN. TYP. MAX.

dBm 43.0 44.0

⎯

±0.8

3.0

⎯

+50

⎯

VDS = 24V

IDSset≅1.0A

Gain Flatness

⎯

2.5

⎯

Drain Current

IDS1

ηadd

Ig_RF

f = 13.75 to 14.5GHz

@ Pin=39dBm

Power Added Efficiency

Gate Current

dBc

-20

7.0

-25

Linear Gain

8.0

⎯

@Pin=20dBm

⎯

3rd Order Intermodulation

IM3

Two-Tone Test

Po= 37.0dBm

Distortion

(Single Carrier Level)

Drain Current

IDS2

⎯

1.75 2.25

140

(VDS X IDS + Pin – Pout) X Rth(c-c)

Channel Temperature Rise

ΔTch

⎯

Recommended gate resistance(Rg) : Rg= 13.3 Ω (TYP.)

ELECTRICAL CHARACTERISTICS ( Ta= 25 C )

CHARACTERISTICS

Transconductance

SYMBOL

CONDITIONS

VDS= 5V

IDS= 2.5A

VGSoff VDS= 5V

IDS= 11.5mA

VDS= 5V

VGS= 0V

UNIT MIN. TYP. MAX.

2.25

⎯

Pinch-off Voltage

-1

-4

-6

Saturated Drain Current

IDSS

7.5

⎯

-10

⎯

Gate-Source Breakdown

Voltage

VGSO IGS= -5mA

⎯

C/W

Thermal Resistance

Rth(c-c) Channel to Case

TBD

⎯

The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by

TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by

implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change

without prior notice. It is therefore advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product.

Feb., 2012

中文翻译

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