TGI8596-50

更新时间： 2024-09-18 12:35:51

品牌	Logo	应用领域
东芝 - TOSHIBA		微波
页数	文件大小	规格书
2页	133K
描述
MICROWAVE POWER GaN HEMT

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数据手册

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TGI8596-50 数据手册

MICROWAVE POWER GaN HEMT

MICROWAVE SEMICONDUCTOR

TGI8596-50

TECHNICAL DATA

FEATURES

HIGH POWER

BROAD BAND INTERNALLY MATCHED HEMT

Pout=47.0dBm at Pin=41.0dBm

HIGH GAIN

HERMETICALLY SEALED PACKAGE

GL=9.0dB at 8.5GHz to 9.6GHz

RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )

CHARACTERISTICS

Output Power

SYMBOL

Pout

CONDITIONS

VDS= 24V

UNIT MIN. TYP. MAX.

dBm 46.0 47.0 －

IDSset≅1.5A

f = 8.5 to 9.6GHz

@Pin = 41dBm

Drain Current

IDS1

－

5.0

6.0

Power Added Efficiency

η_add

－

Linear Gain

@Pin = 20dBm

7.0

9.0

－

(VDS X IDS1 + Pin – Pout)X Rth(c-c)

Channel Temperature Rise

ΔTch

－

130

150

Recommended gate resistance(Rg) : Rg= 13.3 Ω(TYP.)

ELECTRICAL CHARACTERISTICS ( Ta= 25 C )

CHARACTERISTICS

Transconductance

SYMBOL

CONDITIONS

VDS= 5V

IDS= 5.0A

UNIT MIN. TYP. MAX.

4.5

⎯

Pinch-off Voltage

VGSoff VDS= 5V

IDS= 23mA

-1

-4

-6

Saturated Drain Current

IDSS

VDS= 5V

VGS= 0V

⎯

-10

⎯

1.6

Gate-Source Breakdown

Voltage

VGSO IGS= -10mA

C/W

Thermal Resistance

Rth(c-c) Channel to Case

The information contained herein is presented only as a guide for the applications of our products. No responsibility is

assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,

No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information

contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding

with design of equipment incorporating this product.

Rev. July, 2009

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