生命周期: | Obsolete | Reach Compliance Code: | compliant |
HTS代码: | 8541.30.00.80 | 风险等级: | 5.83 |
其他特性: | FAST | 外壳连接: | ANODE |
标称电路换相断开时间: | 40 µs | 配置: | SINGLE |
关态电压最小值的临界上升速率: | 200 V/us | 最大直流栅极触发电流: | 150 mA |
最大直流栅极触发电压: | 1.5 V | 最大维持电流: | 200 mA |
JEDEC-95代码: | TO-65 | JESD-30 代码: | O-MUPM-D2 |
最大漏电流: | 12 mA | 通态非重复峰值电流: | 670 A |
元件数量: | 1 | 端子数量: | 2 |
最大通态电流: | 63000 A | 最高工作温度: | 125 °C |
最低工作温度: | -40 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | POST/STUD MOUNT |
认证状态: | Not Qualified | 最大均方根通态电流: | 63 A |
重复峰值关态漏电流最大值: | 50 µA | 断态重复峰值电压: | 1200 V |
重复峰值反向电压: | 1200 V | 子类别: | Silicon Controlled Rectifiers |
表面贴装: | NO | 端子形式: | SOLDER LUG |
端子位置: | UPPER | 触发设备类型: | SCR |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TGF148-1200Z | STMICROELECTRONICS |
获取价格 |
SILICON CONTROLLED RECTIFIER,1.2KV V(DRM),63A I(T),TO-208AC | |
TGF148-600B | STMICROELECTRONICS |
获取价格 |
63A, 600V, SCR, TO-65 | |
TGF148-600Z | STMICROELECTRONICS |
获取价格 |
SILICON CONTROLLED RECTIFIER,600V V(DRM),63A I(T),TO-208AC | |
TGF148-700B | STMICROELECTRONICS |
获取价格 |
SILICON CONTROLLED RECTIFIER,700V V(DRM),63A I(T),TO-208AC | |
TGF148-700Z | STMICROELECTRONICS |
获取价格 |
SILICON CONTROLLED RECTIFIER,700V V(DRM),63A I(T),TO-208AC | |
TGF148-800B | STMICROELECTRONICS |
获取价格 |
63A, 800V, SCR, TO-65 | |
TGF148-800Z | STMICROELECTRONICS |
获取价格 |
SILICON CONTROLLED RECTIFIER,800V V(DRM),63A I(T),TO-208AC | |
TGF148-900B | STMICROELECTRONICS |
获取价格 |
SILICON CONTROLLED RECTIFIER,900V V(DRM),63A I(T),TO-208AC | |
TGF148-900Z | STMICROELECTRONICS |
获取价格 |
SILICON CONTROLLED RECTIFIER,900V V(DRM),63A I(T),TO-208AC | |
TGF149-100A | STMICROELECTRONICS |
获取价格 |
SILICON CONTROLLED RECTIFIER,100V V(DRM),63A I(T),TO-208AC |