Datasheet > TGESD5V0X3BLP3

TGESD5V0X3BLP3

更新时间： 2024-04-09 18:59:47

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		电视
页数	文件大小	规格书
3页	326K
描述
5V,60W,Surface Mount TVS

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TGESD5V0X3BLP3 数据手册

Ultra-low Capacitance Bi-directional TVS Diode

TGESD5V0X3BLP3

Electrical Characteristics (@ T_A= 25℃ unless otherwise specified)

Parameter

Symbol

V_RWM

V_(BR)

Test Condition

Min.

Typ.

Max.

Unit

Reverse Stand-off Voltage

Reverse Breakdown Voltage

Reverse Leakage Current

I_T= 1mA

6.5

I_R

V_RWM= 5V

100

I_PP= 1A, tp = 8/20μs

I_PP= 3A, tp = 8/20μs

V_R= 0V, f = 1MHZ

0.18

Clamping Voltage

V_C

C_J

Junction Capacitance

0.25

Ratings and Characteristic Curves (@ T_A= 25°C unless otherwise specified)

Fig 1 8/2 0μs waveform per IEC61000-4-5

Fig 2 ESD pulse waveform according to

IEC61000-4-2

110

100

T_A(℃)

100

125

150

Fig 3 Power Derating Curve

TVM0198A: July 2020

www.gmesemi.com

123

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