Datasheet > TGBLN4401-5DL8

TGBLN4401-5DL8

更新时间： 2024-04-09 19:01:43

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	695K
描述
48A, 40V, 31W, N Channel, Dual MOSFETs

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TGBLN4401-5DL8 数据手册

Dual N-Channel Enhancement Mode Power MOSFE

TGBLN4401-5DL8

Ratings and Characteristics Curves (@ T_A= 25°C unless otherwise specified)

100

V_GS= 4 V

V_GS= 4.5 V

V_GS= 3.5 V

V_GS= 6 V~ 10 V

V_GS= 4.5 V

V_GS= 3 V

V_GS= 10 V

V_GS= 2.5 V

100

V_DS(V)

I_D(A)

Fig 1 Typical Output Characteristics

Fig 2 On-Resistance vs. Drain Current

and Gate Voltage

100

I_D= 10A

150℃

25℃

150℃

25℃

-55℃

0.3

0.6

0.9

1.2

1.5

V_GS(V)

V_SD(V)

Fig 3 On-Resistance vs. Gate-Source Voltage

Fig 4 Body-Diode Characteristics

1.8

V_DS= 10V

1.6

1.4

1.2

150℃

V_GS= 10V; I_D= 10A

25℃

-55℃

0.8

0.6

-75 -50 -25

25 50 75 100 125 150 175

T_J(℃)

V_GS(V)

Fig 5 On-Resistance vs. Junction Temperature

Fig 6 Transfer Characteristics

MTM0623A: September 2022 [2.1]

www.gmesemi.com

1 234 5

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