Datasheet > TGBLN4401-5DL8

TGBLN4401-5DL8

更新时间： 2024-04-09 19:01:43

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	695K
描述
48A, 40V, 31W, N Channel, Dual MOSFETs

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TGBLN4401-5DL8 数据手册

Dual N-Channel Enhancement Mode Power MOSFE

TGBLN4401-5DL8

Electrical Characteristics (@ T_J= 25°C unless otherwise specified)

Symbol

Parameter

Test Condition

Min. Typ. Max. Unit

Static Characteristics

V_DSS

I_DSS

I_GSS

Drain-Source Breakdown Voltage

V_GS= 0V, I_D= 250μA

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

V_DS= 40V, V_GS= 0V

V_GS= ±20V, V_DS= 0V

μA

±1 00

On Characteristics

V_GS= 10V,I_D= 10A

V_GS= 4.5V,I_D= 10A

V_DS= V_GS, I_D= 250μA

V_GS= 0V, f = 1MHz

6.8

9.2

1.6

3.8

7.5

12.5

2.5

mΩ

R_DS(ON)

Static Drain-Source On-resistance

V_GS(th)

R_G

Gate Threshold Voltage

Gate Resistance

Dynamic Characteristics

C_ISS

C_OSS

C_RSS

Input Capacitance

825

377

V_GS= 0V

Output Capacitance

V_DS= 20V

f = 1.0MHz

Reverse Transfer Capacitance

Switching Characteristics

t_d(ON)

t_r

t_d(OFF)

t_f

Turn-on Delay Time

Turn-on Rise Time

V_DD= 20V

V_GS= 10V

R_G= 3Ω

Turn-Off Delay Time

Turn-Off Fall Time

I_D= 20A

Q_G

Total Gate-Charge

3.1

V_DD= 20V

V_GS= 10V

I_D= 15A

Q_GS

Q_GD

Gate to Source Charge

Gate to Drain (Miller) Charge

Source-Drain Diode Characteristics

V_SD

trr

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

I_S= 10A, V_GS= 0V

0.8

I_S= 20A, V_GS= 0V

di/dt = 100A/μs

Qrr

Notes:

1. Rated according to R_θJC

2. Rated according to R_Θja

3. Surface−mounted on 1 inch² FR4 board, 2 oz Cu

4. Limited by maximum T_J

5. Starting T_J= 25°C, V_DD= 30V, V_GS= 10V, L = 0.1mH

6. TBC: To be confirmed

MTM0623A: September 2022 [2.1]

www.gmesemi.com

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