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TGBLN3303-S8 PDF预览

TGBLN3303-S8

更新时间: 2024-04-09 18:59:24
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
6页 789K
描述
30V, Dual N Channel MOSFETs

TGBLN3303-S8 数据手册

 浏览型号TGBLN3303-S8的Datasheet PDF文件第1页浏览型号TGBLN3303-S8的Datasheet PDF文件第2页浏览型号TGBLN3303-S8的Datasheet PDF文件第3页浏览型号TGBLN3303-S8的Datasheet PDF文件第4页浏览型号TGBLN3303-S8的Datasheet PDF文件第5页 
Dual N-Channel Enhancement Mode MOSFET  
TGBLN3303-S8  
Package Outline Dimensions (Unit: mm)  
SOP-8  
Min.  
Dimension  
Max.  
5.20  
4.20  
1.50  
0.50  
1.00  
1.37  
0.30  
0.30  
6.20  
A
B
C
D
E
G
H
J
4.80  
3.80  
1.30  
0.30  
0.40  
1.17  
0.10  
0.10  
5.80  
K
Mounting Pad Layout (Unit: mm)  
SOP-8  
Important Notice  
Changzhou Galaxy Century Microelectronics (GME) reserves the right to make changes without further  
notice to any product information (copyrighted) herein to make corrections, modifications,  
improvements, or other changes. GME does not assume any liability arising out of the application or  
use of any product described herein; neither does it convey any license under its patent rights, nor the  
rights of others.  
MTM1391A: September 2023 [2.0]  
www.gmesemi.com  
6

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